Using acoustic energy including two lasers to activate implanted species
Acoustic energy may be utilized to generate phonons for activating implanted species. As a result, greater activation may be achieved with lower thermal budgets. Higher temperatures utilized in conventional processes may result in damage to semiconductor wafers. In some embodiments, the acoustic ene...
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| creator | GOLZARIAN REZA M |
| description | Acoustic energy may be utilized to generate phonons for activating implanted species. As a result, greater activation may be achieved with lower thermal budgets. Higher temperatures utilized in conventional processes may result in damage to semiconductor wafers. In some embodiments, the acoustic energy may be coupled with rapid thermal annealing, laser annealing, or other annealing processes. The acoustic energy may be developed by vibrational sources, laser energy, or other sources. |
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Higher temperatures utilized in conventional processes may result in damage to semiconductor wafers. In some embodiments, the acoustic energy may be coupled with rapid thermal annealing, laser annealing, or other annealing processes. 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As a result, greater activation may be achieved with lower thermal budgets. Higher temperatures utilized in conventional processes may result in damage to semiconductor wafers. In some embodiments, the acoustic energy may be coupled with rapid thermal annealing, laser annealing, or other annealing processes. The acoustic energy may be developed by vibrational sources, laser energy, or other sources.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjDEKwkAQRbexEPUOcwFBDZpeSUivqcOw-YaBdXfJTBRvbwQPYPWK93hL17QqcSD2aVITT4gYhzdJ9GHqv8ZeiQIrRiVLc2fyZAPJIweOhp40wwt07RZ3DorNjytHdXW7NFvk1EEz-3ltXXst98eiPO3Oh-KP5AN4GjSF</recordid><startdate>20061226</startdate><enddate>20061226</enddate><creator>GOLZARIAN REZA M</creator><scope>EVB</scope></search><sort><creationdate>20061226</creationdate><title>Using acoustic energy including two lasers to activate implanted species</title><author>GOLZARIAN REZA M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7153760B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2006</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>GOLZARIAN REZA M</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GOLZARIAN REZA M</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Using acoustic energy including two lasers to activate implanted species</title><date>2006-12-26</date><risdate>2006</risdate><abstract>Acoustic energy may be utilized to generate phonons for activating implanted species. As a result, greater activation may be achieved with lower thermal budgets. Higher temperatures utilized in conventional processes may result in damage to semiconductor wafers. In some embodiments, the acoustic energy may be coupled with rapid thermal annealing, laser annealing, or other annealing processes. The acoustic energy may be developed by vibrational sources, laser energy, or other sources.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Using acoustic energy including two lasers to activate implanted species |
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