Method for thermally treating a substrate that comprises several layers

Method for thermally treating a substrate that comprises several layers

A method of thermally treating a substrate that has multiple layers is provided. A substrate layer that is covered on opposite sides is oxidized from side edges thereof toward a center thereof such that, via the following steps, a defined central portion is not oxidized. The substrate is heated in a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ROTERS GEORG, CHUNG HIN YIU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator ROTERS GEORG
CHUNG HIN YIU
description A method of thermally treating a substrate that has multiple layers is provided. A substrate layer that is covered on opposite sides is oxidized from side edges thereof toward a center thereof such that, via the following steps, a defined central portion is not oxidized. The substrate is heated in a process chamber to a prescribed treatment temperature. A hydrogen-rich water vapor is introduced into the process chamber for a specified period of time, wherein such introduction is effected prior to, during and/or after the step of heating the substrate to the prescribed temperature. After conclusion of the specified period of time, introduced into the process chamber is one of the group consisting of: dry oxygen, namely pure oxygen in the form of at least one of atomic O, molecular O2 and O3; a mixture of oxygen and an inert gas that does not chemically react with the layers of the substrate; an oxygen-containing compound that contains no water; and an oxygen-rich water vapor.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US7144747B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US7144747B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US7144747B23</originalsourceid><addsrcrecordid>eNqNyjsOwkAMRdFpKBCwB2-AAhhpehCfhgqoIxNeSCQnM7INUnYPBQugusW503A8w9v8oCYreQvtWWQkV7B3w5OY7HU3V3Z8mZ3q3BftDEaGN5SFhEeozcOkYTEsfp0FOuyvu9MSJVewwjUGeHW7pFWMKabtevPH8gFAHzRC</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for thermally treating a substrate that comprises several layers</title><source>esp@cenet</source><creator>ROTERS GEORG ; CHUNG HIN YIU</creator><creatorcontrib>ROTERS GEORG ; CHUNG HIN YIU</creatorcontrib><description>A method of thermally treating a substrate that has multiple layers is provided. A substrate layer that is covered on opposite sides is oxidized from side edges thereof toward a center thereof such that, via the following steps, a defined central portion is not oxidized. The substrate is heated in a process chamber to a prescribed treatment temperature. A hydrogen-rich water vapor is introduced into the process chamber for a specified period of time, wherein such introduction is effected prior to, during and/or after the step of heating the substrate to the prescribed temperature. After conclusion of the specified period of time, introduced into the process chamber is one of the group consisting of: dry oxygen, namely pure oxygen in the form of at least one of atomic O, molecular O2 and O3; a mixture of oxygen and an inert gas that does not chemically react with the layers of the substrate; an oxygen-containing compound that contains no water; and an oxygen-rich water vapor.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20061205&amp;DB=EPODOC&amp;CC=US&amp;NR=7144747B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20061205&amp;DB=EPODOC&amp;CC=US&amp;NR=7144747B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ROTERS GEORG</creatorcontrib><creatorcontrib>CHUNG HIN YIU</creatorcontrib><title>Method for thermally treating a substrate that comprises several layers</title><description>A method of thermally treating a substrate that has multiple layers is provided. A substrate layer that is covered on opposite sides is oxidized from side edges thereof toward a center thereof such that, via the following steps, a defined central portion is not oxidized. The substrate is heated in a process chamber to a prescribed treatment temperature. A hydrogen-rich water vapor is introduced into the process chamber for a specified period of time, wherein such introduction is effected prior to, during and/or after the step of heating the substrate to the prescribed temperature. After conclusion of the specified period of time, introduced into the process chamber is one of the group consisting of: dry oxygen, namely pure oxygen in the form of at least one of atomic O, molecular O2 and O3; a mixture of oxygen and an inert gas that does not chemically react with the layers of the substrate; an oxygen-containing compound that contains no water; and an oxygen-rich water vapor.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjsOwkAMRdFpKBCwB2-AAhhpehCfhgqoIxNeSCQnM7INUnYPBQugusW503A8w9v8oCYreQvtWWQkV7B3w5OY7HU3V3Z8mZ3q3BftDEaGN5SFhEeozcOkYTEsfp0FOuyvu9MSJVewwjUGeHW7pFWMKabtevPH8gFAHzRC</recordid><startdate>20061205</startdate><enddate>20061205</enddate><creator>ROTERS GEORG</creator><creator>CHUNG HIN YIU</creator><scope>EVB</scope></search><sort><creationdate>20061205</creationdate><title>Method for thermally treating a substrate that comprises several layers</title><author>ROTERS GEORG ; CHUNG HIN YIU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7144747B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2006</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ROTERS GEORG</creatorcontrib><creatorcontrib>CHUNG HIN YIU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ROTERS GEORG</au><au>CHUNG HIN YIU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for thermally treating a substrate that comprises several layers</title><date>2006-12-05</date><risdate>2006</risdate><abstract>A method of thermally treating a substrate that has multiple layers is provided. A substrate layer that is covered on opposite sides is oxidized from side edges thereof toward a center thereof such that, via the following steps, a defined central portion is not oxidized. The substrate is heated in a process chamber to a prescribed treatment temperature. A hydrogen-rich water vapor is introduced into the process chamber for a specified period of time, wherein such introduction is effected prior to, during and/or after the step of heating the substrate to the prescribed temperature. After conclusion of the specified period of time, introduced into the process chamber is one of the group consisting of: dry oxygen, namely pure oxygen in the form of at least one of atomic O, molecular O2 and O3; a mixture of oxygen and an inert gas that does not chemically react with the layers of the substrate; an oxygen-containing compound that contains no water; and an oxygen-rich water vapor.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US7144747B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for thermally treating a substrate that comprises several layers
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T20%3A03%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ROTERS%20GEORG&rft.date=2006-12-05&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS7144747B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true