Semiconductor channel on insulator structure

A method including forming a via dielectric layer on a semiconductor device substrate; forming a trench dielectric layer on the via dielectric layer; forming a trench through the trench dielectric layer to expose the via dielectric layer; forming a via in the via dielectric layer through the trench...

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Hauptverfasser: HARELAND SCOTT A, BOYANOV BOYAN I, DATTA SUMAN, KAVALIEROS JACK T, METZ MATTHEW V, DOCZY MARK L, CHAU ROBERT S, DOYLE BRIAN S, JIN BEEN-YIH
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creator HARELAND SCOTT A
BOYANOV BOYAN I
DATTA SUMAN
KAVALIEROS JACK T
METZ MATTHEW V
DOCZY MARK L
CHAU ROBERT S
DOYLE BRIAN S
JIN BEEN-YIH
description A method including forming a via dielectric layer on a semiconductor device substrate; forming a trench dielectric layer on the via dielectric layer; forming a trench through the trench dielectric layer to expose the via dielectric layer; forming a via in the via dielectric layer through the trench to expose the substrate; and forming a semiconductor material in the via and in the trench. An apparatus including a device substrate; a dielectric layer formed on a surface of the device substrate; and a device base formed on the dielectric layer including a crystalline structure derived from the device substrate.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor channel on insulator structure
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