Apparatus and method for forming heat sinks on silicon on insulator wafers

An apparatus and method for a heat sink to dissipate the heat sourced by the encapsulated transistors in a SOI wafer. The apparatus includes a transistor formed in the active silicon layer of the wafer. The active surface is formed over an oxide layer and a bulk silicon layer. A heat sink is formed...

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Bibliographische Detailangaben
Hauptverfasser: VASHCHENKO VLADISLAV, MIRGORODSKI IOURI, HOPPER PETER J, JOHNSON PETER
Format: Patent
Sprache:eng
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