Method of forming a metal-insulator-metal capacitor in an interconnect cavity

A metal-insulator-metal capacitor is embedded in an interconnect layer of an integrated circuit (IC). The interconnect layer has a cavity, and the capacitor is formed in the cavity with one of the plates of the capacitor integral with a conductive layer of the interconnect layer, so the capacitor pl...

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Bibliographische Detailangaben

Hauptverfasser:	ALLMAN DERRYL D. J, FUCHS KENNETH
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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