Method and system for providing a power lateral PNP transistor using a buried power buss

A power lateral PNP device is disclosed which includes an epitaxial layer; a first and second collector region embedded in the epitaxial layer; an emitter region between the first and second collector regions. Therefore slots are placed in each of the regions. Accordingly, in a first approach the st...

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Bibliographische Detailangaben

Hauptverfasser:	HUSHER JOHN DURBIN, SCHLUPP RONALD L
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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