Substituted donor atoms in silicon crystal for quantum computer

This invention concerns nanoscale products, such as electronic devices fabricated to nanometer accuracy. It also concerns atomic scale products. These products may have an array of electrically active dopant atoms in a silicon surface, or an encapsulated layer of electrically active donor atoms. In...

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Bibliographische Detailangaben
Hauptverfasser:	CURSON NEIL JONATHAN, OBERBECK LARS, HALLAM TOBY, SIMMONS MICHELLE YVONNE, CLARK ROBERT GRAHAM, SCHOFIELD STEVEN RICHARD
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM] BASIC ELECTRIC ELEMENTS CALCULATING CHEMISTRY COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS COMPUTING COUNTING CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT THEREOF MEASURING METALLURGY NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY PERFORMING OPERATIONS PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SCANNING-PROBE TECHNIQUES OR APPARATUS SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TESTING TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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