lll-phosphide light emitting devices with thin active layers

The extraction efficiency of a light emitting device can be improved by making the absorbing device layers as thin as possible. The internal quantum efficiency decreases as the device layers become thinner. An optimal active layer thickness balances both effects. An AlGaInP LED includes a substrate...

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Bibliographische Detailangaben

Hauptverfasser:	KISH FRED A, CHUI HERMAN C, STOCKMAN STEPHEN A, HOFLER GLORIA E, KOCOT CHRISTOPHER, MOLL NICOLAS J, KRAMES MICHAEL R, TAN TUN-SEIN, GARDNER NATHAN F
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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