High luminance indium gallium aluminum nitride light emitting device and manufacture method thereof

High luminance indium gallium aluminum nitride light emitting device and manufacture method thereof

A high luminance indium gallium aluminum nitride light emitting diode (LED) is disclosed, including a substrate, a first conductive type nitride layer, an active layer, a second conductive type nitride layer, a first contact layer, a second contact layer, and a conductive transparent layer. The firs...

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Hauptverfasser: TU CHUNGNG, HUANG PAO-I, WU JENAU
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator TU CHUNGNG
HUANG PAO-I
WU JENAU
description A high luminance indium gallium aluminum nitride light emitting diode (LED) is disclosed, including a substrate, a first conductive type nitride layer, an active layer, a second conductive type nitride layer, a first contact layer, a second contact layer, and a conductive transparent layer. The first contact layer has a first bandgap and a first doping concentration, and is disposed on the second conductive type nitride layer. The second contact layer has a second bandgap and a second doping concentration, and is disposed on the first contact layer. The first doping concentration and the second doping concentration are respectively larger than a predetermined concentration, and the first bandgap is smaller than the second bandgap. The second contact layer is thinner than a predetermined thickness so that a tunneling effect occurs between the conductive transparent layer and the second contact layer while the LED is in operation.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US7087931B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US7087931B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US7087931B23</originalsourceid><addsrcrecordid>eNqNizEKwkAQRdNYiHqHuYCgpoi2ipJercOw-5MM7E7CZtbzG8UDWL0H__1l4Wrpego5irI6kKiXHKnjED7k7zKLiiXxoDDnRohiJtqRx0vmF6unyJpbdpYTKML6wZP1SBjadbFoOUzY_Lgq6HZ9XOotxqHBNLKDwprnvdodq1O5Px_KP5I3ZVw-yw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>High luminance indium gallium aluminum nitride light emitting device and manufacture method thereof</title><source>esp@cenet</source><creator>TU CHUNGNG ; HUANG PAO-I ; WU JENAU</creator><creatorcontrib>TU CHUNGNG ; HUANG PAO-I ; WU JENAU</creatorcontrib><description>A high luminance indium gallium aluminum nitride light emitting diode (LED) is disclosed, including a substrate, a first conductive type nitride layer, an active layer, a second conductive type nitride layer, a first contact layer, a second contact layer, and a conductive transparent layer. The first contact layer has a first bandgap and a first doping concentration, and is disposed on the second conductive type nitride layer. The second contact layer has a second bandgap and a second doping concentration, and is disposed on the first contact layer. The first doping concentration and the second doping concentration are respectively larger than a predetermined concentration, and the first bandgap is smaller than the second bandgap. The second contact layer is thinner than a predetermined thickness so that a tunneling effect occurs between the conductive transparent layer and the second contact layer while the LED is in operation.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20060808&amp;DB=EPODOC&amp;CC=US&amp;NR=7087931B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20060808&amp;DB=EPODOC&amp;CC=US&amp;NR=7087931B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TU CHUNGNG</creatorcontrib><creatorcontrib>HUANG PAO-I</creatorcontrib><creatorcontrib>WU JENAU</creatorcontrib><title>High luminance indium gallium aluminum nitride light emitting device and manufacture method thereof</title><description>A high luminance indium gallium aluminum nitride light emitting diode (LED) is disclosed, including a substrate, a first conductive type nitride layer, an active layer, a second conductive type nitride layer, a first contact layer, a second contact layer, and a conductive transparent layer. The first contact layer has a first bandgap and a first doping concentration, and is disposed on the second conductive type nitride layer. The second contact layer has a second bandgap and a second doping concentration, and is disposed on the first contact layer. The first doping concentration and the second doping concentration are respectively larger than a predetermined concentration, and the first bandgap is smaller than the second bandgap. The second contact layer is thinner than a predetermined thickness so that a tunneling effect occurs between the conductive transparent layer and the second contact layer while the LED is in operation.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNizEKwkAQRdNYiHqHuYCgpoi2ipJercOw-5MM7E7CZtbzG8UDWL0H__1l4Wrpego5irI6kKiXHKnjED7k7zKLiiXxoDDnRohiJtqRx0vmF6unyJpbdpYTKML6wZP1SBjadbFoOUzY_Lgq6HZ9XOotxqHBNLKDwprnvdodq1O5Px_KP5I3ZVw-yw</recordid><startdate>20060808</startdate><enddate>20060808</enddate><creator>TU CHUNGNG</creator><creator>HUANG PAO-I</creator><creator>WU JENAU</creator><scope>EVB</scope></search><sort><creationdate>20060808</creationdate><title>High luminance indium gallium aluminum nitride light emitting device and manufacture method thereof</title><author>TU CHUNGNG ; HUANG PAO-I ; WU JENAU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7087931B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2006</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TU CHUNGNG</creatorcontrib><creatorcontrib>HUANG PAO-I</creatorcontrib><creatorcontrib>WU JENAU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TU CHUNGNG</au><au>HUANG PAO-I</au><au>WU JENAU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>High luminance indium gallium aluminum nitride light emitting device and manufacture method thereof</title><date>2006-08-08</date><risdate>2006</risdate><abstract>A high luminance indium gallium aluminum nitride light emitting diode (LED) is disclosed, including a substrate, a first conductive type nitride layer, an active layer, a second conductive type nitride layer, a first contact layer, a second contact layer, and a conductive transparent layer. The first contact layer has a first bandgap and a first doping concentration, and is disposed on the second conductive type nitride layer. The second contact layer has a second bandgap and a second doping concentration, and is disposed on the first contact layer. The first doping concentration and the second doping concentration are respectively larger than a predetermined concentration, and the first bandgap is smaller than the second bandgap. The second contact layer is thinner than a predetermined thickness so that a tunneling effect occurs between the conductive transparent layer and the second contact layer while the LED is in operation.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title High luminance indium gallium aluminum nitride light emitting device and manufacture method thereof
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T12%3A04%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TU%20CHUNGNG&rft.date=2006-08-08&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS7087931B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true