Semiconductor device and making thereof

Semiconductor device and making thereof

By forming a conductive smoothing layer over the bottom electrode and/or a capacitor dielectric, a MIM capacitor with improved reliability due to reduction of geometrically enhanced electric fields and electrode smoothing is formed. In one embodiment, layer including a refractory metal or a refracto...

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Hauptverfasser: CIANCIO ANTHONY, MORRISON JENNIFER H, GRISWOLD MARK D, IRUDAYAM AMUDHA R
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator CIANCIO ANTHONY
MORRISON JENNIFER H
GRISWOLD MARK D
IRUDAYAM AMUDHA R
description By forming a conductive smoothing layer over the bottom electrode and/or a capacitor dielectric, a MIM capacitor with improved reliability due to reduction of geometrically enhanced electric fields and electrode smoothing is formed. In one embodiment, layer including a refractory metal or a refractory metal-rich nitride, is formed over a first capping layer formed of a refractory nitride. In addition, a second refractory metal or a refractory metal-rich nitride layer may be formed on the capacitor dielectric. The smoothing layer could also be used in other semiconductor devices, such as transistors between a gate electrode and a gate dielectric.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor device and making thereof
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