Vertical replacement-gate silicon-on-insulator transistor

An architecture for creating a vertical silicon-on-insulator MOSFET. Generally, an integrated circuit structure includes a semiconductor area with a major surface formed along a plane and a first source/drain contact region formed in the surface. A relatively thin single crystalline layer is oriente...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHAUDHRY SAMIR, LAYMAN PAUL ARTHUR, MCMACKEN JOHN RUSSELL, ZHAO JACK QINGSHENG, THOMSON J. ROSS
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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