Field ramp down for pinned synthetic antiferromagnet

Field ramp down for pinned synthetic antiferromagnet

Techniques for processing magnetic devices are provided. In one aspect, a method of processing a magnetic device including two or more anti-parallel coupled layers comprises the following steps. A magnetic field is applied in a given direction to orient a direction of magnetization of the two or mor...

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Hauptverfasser: KLOSTERMANN ULRICH, TROUILLOUD PHILIP LOUIS
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Sprache:eng
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INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
STATIC STORES
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creator KLOSTERMANN ULRICH
TROUILLOUD PHILIP LOUIS
description Techniques for processing magnetic devices are provided. In one aspect, a method of processing a magnetic device including two or more anti-parallel coupled layers comprises the following steps. A magnetic field is applied in a given direction to orient a direction of magnetization of the two or more anti-parallel coupled layers. The direction of the applied magnetic field is rotated in relation to a positioning of the two or more anti-parallel coupled layers to counteract at least a portion of a change in a direction of magnetization experienced by at least one of the two or more anti-parallel coupled layers when the applied magnetic field is reduced.
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INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
STATIC STORES
title Field ramp down for pinned synthetic antiferromagnet
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