Power MOSFET device

A power MOSFET device comprising a low resistance substrate of the first conductivity type, a high resistance epitaxial layer of the first conductivity type formed on the low resistance substrate, a base layer of the second conductivity type formed in a surface region of the high resistance epitaxia...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KAWAGUCHI YUSUKE, NAKAGAWA AKIO, ONO SYOTARO, HODAMA SHINICHI, YASUHARA NORIO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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