Electron beam treatment apparatus

Electron beam treatment apparatus

One embodiment of the present invention is an electron beam treatment apparatus that includes: (a) a chamber; (b) a cathode having a surface of relatively large area that is exposed to an inside of the chamber; (c) an anode having holes therein that is disposed inside the chamber and spaced apart fr...

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Hauptverfasser: PONNEKANTI HARI K, ARMER HELEN R, ZHAO JUN, DEMOS ALEXANDROS T
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
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creator PONNEKANTI HARI K
ARMER HELEN R
ZHAO JUN
DEMOS ALEXANDROS T
description One embodiment of the present invention is an electron beam treatment apparatus that includes: (a) a chamber; (b) a cathode having a surface of relatively large area that is exposed to an inside of the chamber; (c) an anode having holes therein that is disposed inside the chamber and spaced apart from the cathode by a working distance; (d) a wafer holder disposed inside the chamber facing the anode; (e) a source of negative voltage whole output is applied to the cathode to provide a cathode voltage; (f) a source of voltage whose output is applied to the anode; (g) a gas inlet adapted to admit gas into the chamber at an introduction rate; and (h) a pump adapted to exhaust gas from the chamber at an exhaust rate, the introduction rate and the exhaust rate providing a gas pressure in the chamber; wherein values of cathode voltage, gas pressure, and the working distance are such that there is no arcing between the cathode and anode and the working distance is greater than an electron mean free path.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US7049606B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US7049606B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US7049606B23</originalsourceid><addsrcrecordid>eNrjZFB0zUlNLinKz1NISk3MVSgpSk0syU3NK1FILChILEosKS3mYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxocHmBiaWZgZmTkbGRCgBAFTJJbA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Electron beam treatment apparatus</title><source>esp@cenet</source><creator>PONNEKANTI HARI K ; ARMER HELEN R ; ZHAO JUN ; DEMOS ALEXANDROS T</creator><creatorcontrib>PONNEKANTI HARI K ; ARMER HELEN R ; ZHAO JUN ; DEMOS ALEXANDROS T</creatorcontrib><description>One embodiment of the present invention is an electron beam treatment apparatus that includes: (a) a chamber; (b) a cathode having a surface of relatively large area that is exposed to an inside of the chamber; (c) an anode having holes therein that is disposed inside the chamber and spaced apart from the cathode by a working distance; (d) a wafer holder disposed inside the chamber facing the anode; (e) a source of negative voltage whole output is applied to the cathode to provide a cathode voltage; (f) a source of voltage whose output is applied to the anode; (g) a gas inlet adapted to admit gas into the chamber at an introduction rate; and (h) a pump adapted to exhaust gas from the chamber at an exhaust rate, the introduction rate and the exhaust rate providing a gas pressure in the chamber; wherein values of cathode voltage, gas pressure, and the working distance are such that there is no arcing between the cathode and anode and the working distance is greater than an electron mean free path.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20060523&amp;DB=EPODOC&amp;CC=US&amp;NR=7049606B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20060523&amp;DB=EPODOC&amp;CC=US&amp;NR=7049606B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PONNEKANTI HARI K</creatorcontrib><creatorcontrib>ARMER HELEN R</creatorcontrib><creatorcontrib>ZHAO JUN</creatorcontrib><creatorcontrib>DEMOS ALEXANDROS T</creatorcontrib><title>Electron beam treatment apparatus</title><description>One embodiment of the present invention is an electron beam treatment apparatus that includes: (a) a chamber; (b) a cathode having a surface of relatively large area that is exposed to an inside of the chamber; (c) an anode having holes therein that is disposed inside the chamber and spaced apart from the cathode by a working distance; (d) a wafer holder disposed inside the chamber facing the anode; (e) a source of negative voltage whole output is applied to the cathode to provide a cathode voltage; (f) a source of voltage whose output is applied to the anode; (g) a gas inlet adapted to admit gas into the chamber at an introduction rate; and (h) a pump adapted to exhaust gas from the chamber at an exhaust rate, the introduction rate and the exhaust rate providing a gas pressure in the chamber; wherein values of cathode voltage, gas pressure, and the working distance are such that there is no arcing between the cathode and anode and the working distance is greater than an electron mean free path.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFB0zUlNLinKz1NISk3MVSgpSk0syU3NK1FILChILEosKS3mYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxocHmBiaWZgZmTkbGRCgBAFTJJbA</recordid><startdate>20060523</startdate><enddate>20060523</enddate><creator>PONNEKANTI HARI K</creator><creator>ARMER HELEN R</creator><creator>ZHAO JUN</creator><creator>DEMOS ALEXANDROS T</creator><scope>EVB</scope></search><sort><creationdate>20060523</creationdate><title>Electron beam treatment apparatus</title><author>PONNEKANTI HARI K ; ARMER HELEN R ; ZHAO JUN ; DEMOS ALEXANDROS T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7049606B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2006</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>PONNEKANTI HARI K</creatorcontrib><creatorcontrib>ARMER HELEN R</creatorcontrib><creatorcontrib>ZHAO JUN</creatorcontrib><creatorcontrib>DEMOS ALEXANDROS T</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PONNEKANTI HARI K</au><au>ARMER HELEN R</au><au>ZHAO JUN</au><au>DEMOS ALEXANDROS T</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Electron beam treatment apparatus</title><date>2006-05-23</date><risdate>2006</risdate><abstract>One embodiment of the present invention is an electron beam treatment apparatus that includes: (a) a chamber; (b) a cathode having a surface of relatively large area that is exposed to an inside of the chamber; (c) an anode having holes therein that is disposed inside the chamber and spaced apart from the cathode by a working distance; (d) a wafer holder disposed inside the chamber facing the anode; (e) a source of negative voltage whole output is applied to the cathode to provide a cathode voltage; (f) a source of voltage whose output is applied to the anode; (g) a gas inlet adapted to admit gas into the chamber at an introduction rate; and (h) a pump adapted to exhaust gas from the chamber at an exhaust rate, the introduction rate and the exhaust rate providing a gas pressure in the chamber; wherein values of cathode voltage, gas pressure, and the working distance are such that there is no arcing between the cathode and anode and the working distance is greater than an electron mean free path.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
title Electron beam treatment apparatus
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T13%3A46%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=PONNEKANTI%20HARI%20K&rft.date=2006-05-23&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS7049606B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true