Process for producing silica-based film, silica-based film, insulating film, and semiconductor device

A process for producing a silica-based film which comprises irradiating a film comprising at least one siloxane compound with electron beams to thereby convert the film into a film having a dielectric constant of 3 or lower and having silicon carbide bonds represented by Si-C-Si is disclosed. The fi...

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Bibliographische Detailangaben

Hauptverfasser:	SUMIYA KOUJI, SHIOTA ATSUSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM PERFORMING OPERATIONS SEMICONDUCTOR DEVICES TRANSPORTING
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