Semiconductor device and method for fabricating the same

Impurities for threshold voltage adjustment are implanted using a resist film and a protective dielectric as implantation masks from directions inclined at 10° through 30° with respect to the direction vertical to the principal surface of a semiconductor substrate 1 when viewed in cross section take...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YAMADA TAKAYUKI, SEBE AKIO, NAKAOKA HIROAKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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