Dry developing method
A dry developing method for drawing a resist formed on a processed body by leading processing gas between parallel flat electrodes installed in a vacuum processing container and forming the plasma of the processing gas by applying a high frequency power to the electrodes, comprising the step of plas...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | NISHINO MASARU INAZAWA KOICHIRO BALASUBRAMANIAM VAIDYA NATHAN KITAMURA AKINORI |
description | A dry developing method for drawing a resist formed on a processed body by leading processing gas between parallel flat electrodes installed in a vacuum processing container and forming the plasma of the processing gas by applying a high frequency power to the electrodes, comprising the step of plasma-processing the resist on an etched layer having an already developed upper layer resist containing silicon and a lower layer resist installed in contact with the lower layer of the upper layer resist, wherein the lower layer resist is processed by a first process for plasma-processing by using the mixed gas of carbon monoxide gas and oxygen gas and a second step for plasma-processing by using the mixed gas of nitrogen gas and hydrogen gas, whereby an accurate drawing can be applied efficiently to the resist. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US6986851B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US6986851B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US6986851B23</originalsourceid><addsrcrecordid>eNrjZBB1KapUSEktS83JL8jMS1fITS3JyE_hYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxocFmlhZmFqaGTkbGRCgBADvxIQE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Dry developing method</title><source>esp@cenet</source><creator>NISHINO MASARU ; INAZAWA KOICHIRO ; BALASUBRAMANIAM VAIDYA NATHAN ; KITAMURA AKINORI</creator><creatorcontrib>NISHINO MASARU ; INAZAWA KOICHIRO ; BALASUBRAMANIAM VAIDYA NATHAN ; KITAMURA AKINORI</creatorcontrib><description>A dry developing method for drawing a resist formed on a processed body by leading processing gas between parallel flat electrodes installed in a vacuum processing container and forming the plasma of the processing gas by applying a high frequency power to the electrodes, comprising the step of plasma-processing the resist on an etched layer having an already developed upper layer resist containing silicon and a lower layer resist installed in contact with the lower layer of the upper layer resist, wherein the lower layer resist is processed by a first process for plasma-processing by using the mixed gas of carbon monoxide gas and oxygen gas and a second step for plasma-processing by using the mixed gas of nitrogen gas and hydrogen gas, whereby an accurate drawing can be applied efficiently to the resist.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS ; CHEMISTRY ; CINEMATOGRAPHY ; DECORATIVE ARTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; GLASS ; HOLOGRAPHY ; JOINING GLASS TO GLASS OR OTHER MATERIALS ; MATERIALS THEREFOR ; METALLURGY ; MINERAL OR SLAG WOOL ; MOSAICS ; ORIGINALS THEREFOR ; PAPERHANGING ; PERFORMING OPERATIONS ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; PRODUCING DECORATIVE EFFECTS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS ; SURFACE TREATMENT OF GLASS ; TARSIA WORK ; TRANSPORTING</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060117&DB=EPODOC&CC=US&NR=6986851B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060117&DB=EPODOC&CC=US&NR=6986851B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NISHINO MASARU</creatorcontrib><creatorcontrib>INAZAWA KOICHIRO</creatorcontrib><creatorcontrib>BALASUBRAMANIAM VAIDYA NATHAN</creatorcontrib><creatorcontrib>KITAMURA AKINORI</creatorcontrib><title>Dry developing method</title><description>A dry developing method for drawing a resist formed on a processed body by leading processing gas between parallel flat electrodes installed in a vacuum processing container and forming the plasma of the processing gas by applying a high frequency power to the electrodes, comprising the step of plasma-processing the resist on an etched layer having an already developed upper layer resist containing silicon and a lower layer resist installed in contact with the lower layer of the upper layer resist, wherein the lower layer resist is processed by a first process for plasma-processing by using the mixed gas of carbon monoxide gas and oxygen gas and a second step for plasma-processing by using the mixed gas of nitrogen gas and hydrogen gas, whereby an accurate drawing can be applied efficiently to the resist.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS</subject><subject>CHEMISTRY</subject><subject>CINEMATOGRAPHY</subject><subject>DECORATIVE ARTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>GLASS</subject><subject>HOLOGRAPHY</subject><subject>JOINING GLASS TO GLASS OR OTHER MATERIALS</subject><subject>MATERIALS THEREFOR</subject><subject>METALLURGY</subject><subject>MINERAL OR SLAG WOOL</subject><subject>MOSAICS</subject><subject>ORIGINALS THEREFOR</subject><subject>PAPERHANGING</subject><subject>PERFORMING OPERATIONS</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>PRODUCING DECORATIVE EFFECTS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS</subject><subject>SURFACE TREATMENT OF GLASS</subject><subject>TARSIA WORK</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBB1KapUSEktS83JL8jMS1fITS3JyE_hYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxocFmlhZmFqaGTkbGRCgBADvxIQE</recordid><startdate>20060117</startdate><enddate>20060117</enddate><creator>NISHINO MASARU</creator><creator>INAZAWA KOICHIRO</creator><creator>BALASUBRAMANIAM VAIDYA NATHAN</creator><creator>KITAMURA AKINORI</creator><scope>EVB</scope></search><sort><creationdate>20060117</creationdate><title>Dry developing method</title><author>NISHINO MASARU ; INAZAWA KOICHIRO ; BALASUBRAMANIAM VAIDYA NATHAN ; KITAMURA AKINORI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US6986851B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2006</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS</topic><topic>CHEMISTRY</topic><topic>CINEMATOGRAPHY</topic><topic>DECORATIVE ARTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>GLASS</topic><topic>HOLOGRAPHY</topic><topic>JOINING GLASS TO GLASS OR OTHER MATERIALS</topic><topic>MATERIALS THEREFOR</topic><topic>METALLURGY</topic><topic>MINERAL OR SLAG WOOL</topic><topic>MOSAICS</topic><topic>ORIGINALS THEREFOR</topic><topic>PAPERHANGING</topic><topic>PERFORMING OPERATIONS</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>PRODUCING DECORATIVE EFFECTS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS</topic><topic>SURFACE TREATMENT OF GLASS</topic><topic>TARSIA WORK</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>NISHINO MASARU</creatorcontrib><creatorcontrib>INAZAWA KOICHIRO</creatorcontrib><creatorcontrib>BALASUBRAMANIAM VAIDYA NATHAN</creatorcontrib><creatorcontrib>KITAMURA AKINORI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NISHINO MASARU</au><au>INAZAWA KOICHIRO</au><au>BALASUBRAMANIAM VAIDYA NATHAN</au><au>KITAMURA AKINORI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Dry developing method</title><date>2006-01-17</date><risdate>2006</risdate><abstract>A dry developing method for drawing a resist formed on a processed body by leading processing gas between parallel flat electrodes installed in a vacuum processing container and forming the plasma of the processing gas by applying a high frequency power to the electrodes, comprising the step of plasma-processing the resist on an etched layer having an already developed upper layer resist containing silicon and a lower layer resist installed in contact with the lower layer of the upper layer resist, wherein the lower layer resist is processed by a first process for plasma-processing by using the mixed gas of carbon monoxide gas and oxygen gas and a second step for plasma-processing by using the mixed gas of nitrogen gas and hydrogen gas, whereby an accurate drawing can be applied efficiently to the resist.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US6986851B2 |
source | esp@cenet |
subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMISTRY CINEMATOGRAPHY DECORATIVE ARTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY GLASS HOLOGRAPHY JOINING GLASS TO GLASS OR OTHER MATERIALS MATERIALS THEREFOR METALLURGY MINERAL OR SLAG WOOL MOSAICS ORIGINALS THEREFOR PAPERHANGING PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PRODUCING DECORATIVE EFFECTS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS TARSIA WORK TRANSPORTING |
title | Dry developing method |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T21%3A07%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NISHINO%20MASARU&rft.date=2006-01-17&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS6986851B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |