Method for chemical etch control of noble metals in the presence of less noble metals
A method for preparing a bonding pad on an integrated circuit wafer by the steps of depositing a conductive seed layer ( 104 ) on the bonding pad; depositing a metal layer ( 301, 302 , and 303 ) over a portion of the conductive seed layer; and immersing the wafer in an etchant solution ( 501 ) to re...
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| creator | BOJKOV CHRISTO P ARBUTHNOT DIANE L KUNESH ROBERT F |
| description | A method for preparing a bonding pad on an integrated circuit wafer by the steps of depositing a conductive seed layer ( 104 ) on the bonding pad; depositing a metal layer ( 301, 302 , and 303 ) over a portion of the conductive seed layer; and immersing the wafer in an etchant solution ( 501 ) to remove the portion of the seed layer not covered by the metal layer. The etchant solution contains a chelating agent that bonds ions from the seed layer. When the seed layer is copper or a refractory metal, and the metal layer is gold or palladium, the preferred chelating agent is selected from, but is not limited to, but is not limited to, the families of ethylenediaminetetraacetic acids (EDTA), 8-hydroxy-quinolines, including 8-hydroxy-quinoline-5-sulfonic acid, porphyrins, and phthalocyanines. |
| format | Patent |
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The etchant solution contains a chelating agent that bonds ions from the seed layer. When the seed layer is copper or a refractory metal, and the metal layer is gold or palladium, the preferred chelating agent is selected from, but is not limited to, but is not limited to, the families of ethylenediaminetetraacetic acids (EDTA), 8-hydroxy-quinolines, including 8-hydroxy-quinoline-5-sulfonic acid, porphyrins, and phthalocyanines.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; SEMICONDUCTOR DEVICES</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20051227&DB=EPODOC&CC=US&NR=6979647B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20051227&DB=EPODOC&CC=US&NR=6979647B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BOJKOV CHRISTO P</creatorcontrib><creatorcontrib>ARBUTHNOT DIANE L</creatorcontrib><creatorcontrib>KUNESH ROBERT F</creatorcontrib><title>Method for chemical etch control of noble metals in the presence of less noble metals</title><description>A method for preparing a bonding pad on an integrated circuit wafer by the steps of depositing a conductive seed layer ( 104 ) on the bonding pad; depositing a metal layer ( 301, 302 , and 303 ) over a portion of the conductive seed layer; and immersing the wafer in an etchant solution ( 501 ) to remove the portion of the seed layer not covered by the metal layer. The etchant solution contains a chelating agent that bonds ions from the seed layer. When the seed layer is copper or a refractory metal, and the metal layer is gold or palladium, the preferred chelating agent is selected from, but is not limited to, but is not limited to, the families of ethylenediaminetetraacetic acids (EDTA), 8-hydroxy-quinolines, including 8-hydroxy-quinoline-5-sulfonic acid, porphyrins, and phthalocyanines.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2005</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwjAQh_EsDqK-w72Ai0pLV4vi4qSdSzz_IYX0LiT3_qjg4ub0G75v6YYrLOqTghbiiHlinwjGkVjFiibSQKKPBJphPlWahCyCckGFMD49odafae0W4Q02X1eOzqd7f9ki64iaPUNg43BrurZrDu1xt_9jeQEYezhr</recordid><startdate>20051227</startdate><enddate>20051227</enddate><creator>BOJKOV CHRISTO P</creator><creator>ARBUTHNOT DIANE L</creator><creator>KUNESH ROBERT F</creator><scope>EVB</scope></search><sort><creationdate>20051227</creationdate><title>Method for chemical etch control of noble metals in the presence of less noble metals</title><author>BOJKOV CHRISTO P ; ARBUTHNOT DIANE L ; KUNESH ROBERT F</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US6979647B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2005</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>BOJKOV CHRISTO P</creatorcontrib><creatorcontrib>ARBUTHNOT DIANE L</creatorcontrib><creatorcontrib>KUNESH ROBERT F</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BOJKOV CHRISTO P</au><au>ARBUTHNOT DIANE L</au><au>KUNESH ROBERT F</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for chemical etch control of noble metals in the presence of less noble metals</title><date>2005-12-27</date><risdate>2005</risdate><abstract>A method for preparing a bonding pad on an integrated circuit wafer by the steps of depositing a conductive seed layer ( 104 ) on the bonding pad; depositing a metal layer ( 301, 302 , and 303 ) over a portion of the conductive seed layer; and immersing the wafer in an etchant solution ( 501 ) to remove the portion of the seed layer not covered by the metal layer. 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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES |
| title | Method for chemical etch control of noble metals in the presence of less noble metals |
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