Systems for programmable memory using silicided poly-silicon fuses

The present invention is directed to systems for evaluating one-time programmable memory cells. A threshold current is applied to a resistive circuit, thereby generating a threshold voltage. A read current is applied to a first memory cell, thereby generating a memory cell voltage. The memory cell v...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LOW KHIM L, BROOKS TODD L, ITO AKIRA, WOO AGNES
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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