Method and apparatus for measuring the position of a phase interface during crystal growth
In the method and apparatus for measuring the position of the phase interface during growth of a crystal from a melt in a crystal growth container according to the VGF method an incident optical signal is propagated to the phase interface between the melt and the crystal through a window ( 16 ) in t...
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| creator | PARTHIER LUTZ WEHRHAN GUNTHER SPEIT BURKHARD LENTES FRANK-THOMAS AXMANN HANS-JOERG |
| description | In the method and apparatus for measuring the position of the phase interface during growth of a crystal from a melt in a crystal growth container according to the VGF method an incident optical signal is propagated to the phase interface between the melt and the crystal through a window ( 16 ) in the container ( 10 ) and a received optical signal reflected from the phase interface ( 14 ) is measured to determine the position of the phase interface. The position of the phase interface is established from the reflected signal by triangulation with a confocal optic system, by interferometric balancing or by transit time of the optical signal. The window ( 16 ) is preferably mounted in a preferably tilted orientation at the end of a tube ( 15 ), which is immersed in the melt ( 12 ). |
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The position of the phase interface is established from the reflected signal by triangulation with a confocal optic system, by interferometric balancing or by transit time of the optical signal. 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The position of the phase interface is established from the reflected signal by triangulation with a confocal optic system, by interferometric balancing or by transit time of the optical signal. 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The position of the phase interface is established from the reflected signal by triangulation with a confocal optic system, by interferometric balancing or by transit time of the optical signal. The window ( 16 ) is preferably mounted in a preferably tilted orientation at the end of a tube ( 15 ), which is immersed in the melt ( 12 ).</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS METALLURGY PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TESTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Method and apparatus for measuring the position of a phase interface during crystal growth |
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