Self aligned vias in dual damascene interconnect, buried mask approach

Methods are disclosed for forming vias, trenches, and interconnects through diffusion barrier, etch-stop, and dielectric materials for interconnection of electrical devices in dual damascene structures of a semiconductor device. A buried via mask at the etch-stop level provides openings with two or...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BRENNAN KENNETH D, GILLESPIE PAUL
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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