Buried power bus utilized as a sinker for high current, high power semiconductor devices and a method for providing the same

Buried power bus utilized as a sinker for high current, high power semiconductor devices and a method for providing the same

A method and system for providing a sinker on a semiconductor device is described. The method and system includes providing a substrate region and providing a buried layer and an epitaxial (EPI) layer over the substrate region. The method and system further includes etching a plurality of device str...

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1. Verfasser: HUSHER JOHN DURBIN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator HUSHER JOHN DURBIN
description A method and system for providing a sinker on a semiconductor device is described. The method and system includes providing a substrate region and providing a buried layer and an epitaxial (EPI) layer over the substrate region. The method and system further includes etching a plurality of device structures in the EPI layer and providing a slot in the semiconductor substrate that is in contact with the buried layer and the substrate region. The method and system finally includes oxidizing the slot except at the bottom of the slot and providing metal within the slot.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Buried power bus utilized as a sinker for high current, high power semiconductor devices and a method for providing the same
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