Semiconductor fabrication process for modifying the profiles of patterned features

A method for forming a sacrificial layer ( 30 ) over patterned structures ( 28 ) to allow structures ( 28 ) to be trimmed laterally without incurring much loss vertically. Structures ( 28 ) are patterned on a first layer ( 26 ) of a substrate ( 24 ). Thereafter, sacrificial layer ( 30 ) is deposited...

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Bibliographische Detailangaben

Hauptverfasser:	ZHANG DA, SPARKS TERRY G
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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