Method for reducing the contact resistance

Method for reducing the contact resistance

A method for reducing the contact resistance using plasma process tries to solve the problem that the cleaning process could not remove both the residues and oxides on the etched surface effectively. A plasma treating process is performed after the cleaning process and before any following process....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LEE YUOU, HSU MINING
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator LEE YUOU
HSU MINING
description A method for reducing the contact resistance using plasma process tries to solve the problem that the cleaning process could not remove both the residues and oxides on the etched surface effectively. A plasma treating process is performed after the cleaning process and before any following process. Herein, the plasma treating process uses the plasma(s) to physically and/or chemically react with the etched surface. For example, inert gas plasma is used to remove these residues and the oxides, and then hydrogen plasma is used to compensate the unsaturated bonds by inducing the ions bombardment of the inert gas plasma.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US6841431B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US6841431B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US6841431B23</originalsourceid><addsrcrecordid>eNrjZNDyTS3JyE9RSMsvUihKTSlNzsxLVyjJSFVIzs8rSUwuAQoWZxaXJOYlp_IwsKYl5hSn8kJpbgYFN9cQZw_d1IL8-NTigsTk1LzUkvjQYDMLE0MTY0MnI2MilAAA4v8o0A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for reducing the contact resistance</title><source>esp@cenet</source><creator>LEE YUOU ; HSU MINING</creator><creatorcontrib>LEE YUOU ; HSU MINING</creatorcontrib><description>A method for reducing the contact resistance using plasma process tries to solve the problem that the cleaning process could not remove both the residues and oxides on the etched surface effectively. A plasma treating process is performed after the cleaning process and before any following process. Herein, the plasma treating process uses the plasma(s) to physically and/or chemically react with the etched surface. For example, inert gas plasma is used to remove these residues and the oxides, and then hydrogen plasma is used to compensate the unsaturated bonds by inducing the ions bombardment of the inert gas plasma.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20050111&amp;DB=EPODOC&amp;CC=US&amp;NR=6841431B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76302</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20050111&amp;DB=EPODOC&amp;CC=US&amp;NR=6841431B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE YUOU</creatorcontrib><creatorcontrib>HSU MINING</creatorcontrib><title>Method for reducing the contact resistance</title><description>A method for reducing the contact resistance using plasma process tries to solve the problem that the cleaning process could not remove both the residues and oxides on the etched surface effectively. A plasma treating process is performed after the cleaning process and before any following process. Herein, the plasma treating process uses the plasma(s) to physically and/or chemically react with the etched surface. For example, inert gas plasma is used to remove these residues and the oxides, and then hydrogen plasma is used to compensate the unsaturated bonds by inducing the ions bombardment of the inert gas plasma.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2005</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDyTS3JyE9RSMsvUihKTSlNzsxLVyjJSFVIzs8rSUwuAQoWZxaXJOYlp_IwsKYl5hSn8kJpbgYFN9cQZw_d1IL8-NTigsTk1LzUkvjQYDMLE0MTY0MnI2MilAAA4v8o0A</recordid><startdate>20050111</startdate><enddate>20050111</enddate><creator>LEE YUOU</creator><creator>HSU MINING</creator><scope>EVB</scope></search><sort><creationdate>20050111</creationdate><title>Method for reducing the contact resistance</title><author>LEE YUOU ; HSU MINING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US6841431B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2005</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE YUOU</creatorcontrib><creatorcontrib>HSU MINING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE YUOU</au><au>HSU MINING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for reducing the contact resistance</title><date>2005-01-11</date><risdate>2005</risdate><abstract>A method for reducing the contact resistance using plasma process tries to solve the problem that the cleaning process could not remove both the residues and oxides on the etched surface effectively. A plasma treating process is performed after the cleaning process and before any following process. Herein, the plasma treating process uses the plasma(s) to physically and/or chemically react with the etched surface. For example, inert gas plasma is used to remove these residues and the oxides, and then hydrogen plasma is used to compensate the unsaturated bonds by inducing the ions bombardment of the inert gas plasma.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US6841431B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for reducing the contact resistance
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T14%3A41%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LEE%20YUOU&rft.date=2005-01-11&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS6841431B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true