Method for etching high-k films in solutions comprising dilute fluoride species

A process for etching high dielectric constant (high-k) films (e.g., ZrzSiyOx, HfzSiyOx, ZrzHfyOx, HfzAlyOx, and ZrzAlyOx) more rapidly than coexisting SiO2, polysilicon, silicon and/or other films is disclosed. The process comprises contacting the films with an aqueous solution comprising a fluorid...

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Hauptverfasser:	SCHWAB BRENT D, WAGENER THOMAS J, CHRISTENSON KURT K, ROSENGREN NEIL BRUCE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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