Maskless middle-of-line liner deposition

A process for fabricating a semiconductor structure, wherein the semiconductor structure includes a core region and a periphery region. The core region includes a plurality of transistors and the periphery region includes a plurality of transistors. The process includes depositing a middle-of-line l...

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Hauptverfasser: BAKER STEVEN M, MALDEI MICHAEL, BERRY, II JON S, COUSINEAU BRIAN, LEE JINHWAN, GERSTMEIER GUENTER, HEDGE MALATI
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creator BAKER STEVEN M
MALDEI MICHAEL
BERRY, II JON S
COUSINEAU BRIAN
LEE JINHWAN
GERSTMEIER GUENTER
HEDGE MALATI
description A process for fabricating a semiconductor structure, wherein the semiconductor structure includes a core region and a periphery region. The core region includes a plurality of transistors and the periphery region includes a plurality of transistors. The process includes depositing a middle-of-line liner using plasma enhanced chemical vapor deposition overlying the semiconductor structure. By using a plasma enhanced chemical vapor deposition the amount of MOL liner deposited in the core region and the periphery region can be controlled depending on the distances between transistors in the core region and periphery region.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Maskless middle-of-line liner deposition
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