Control methodology using optical emission spectroscopy derived data, system for performing same
The present invention is generally directed to various control methodologies using optical emission spectroscopy derived data, and a system for performing same. In one illustrative embodiment, the method comprises performing an etching process within an etch tool to define at least one feature above...
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creator | SONDERMAN THOMAS J |
description | The present invention is generally directed to various control methodologies using optical emission spectroscopy derived data, and a system for performing same. In one illustrative embodiment, the method comprises performing an etching process within an etch tool to define at least one feature above a semiconducting substrate, obtaining optical emission spectroscopy data for the etching process, and controlling at least one parameter of the etching process based upon a comparison of the obtained optical emission spectroscopy data and target optical emission spectroscopy data associated with at least one of a target profile and a target critical dimension for the at least one feature. In one illustrative embodiment, the system is comprised of an etch tool adapted to perform an etch process to define at least one feature, an optical emission spectroscopy sensor operatively coupled to the etch tool, and a controller for controlling at least one parameter of the etching process performed in the etch tool based upon a comparison between optical emission spectroscopy data obtained from the optical emission spectroscopy sensor and target optical emission spectroscopy data associated with at least one of a target profile and a target critical dimension for the at least one feature. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US6818561B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US6818561B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US6818561B13</originalsourceid><addsrcrecordid>eNqNzLEKwjAURuEuDqK-w30AHYJYOlsUd3WuIflbA0luyI1C3t4KPoDTWT7Osnn0HEtmTwHlyZY9T5Ve4uJEnIoz2hOCE3EcSRLMbMVwqmSR3RuWrC56S1KlINDImRLynPA9iA5YN4tRe8Hm11VD59Otv-yQeIAkbRBRhvu17VR3aNVR7f8gH-t3PiQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Control methodology using optical emission spectroscopy derived data, system for performing same</title><source>esp@cenet</source><creator>SONDERMAN THOMAS J</creator><creatorcontrib>SONDERMAN THOMAS J</creatorcontrib><description>The present invention is generally directed to various control methodologies using optical emission spectroscopy derived data, and a system for performing same. In one illustrative embodiment, the method comprises performing an etching process within an etch tool to define at least one feature above a semiconducting substrate, obtaining optical emission spectroscopy data for the etching process, and controlling at least one parameter of the etching process based upon a comparison of the obtained optical emission spectroscopy data and target optical emission spectroscopy data associated with at least one of a target profile and a target critical dimension for the at least one feature. In one illustrative embodiment, the system is comprised of an etch tool adapted to perform an etch process to define at least one feature, an optical emission spectroscopy sensor operatively coupled to the etch tool, and a controller for controlling at least one parameter of the etching process performed in the etch tool based upon a comparison between optical emission spectroscopy data obtained from the optical emission spectroscopy sensor and target optical emission spectroscopy data associated with at least one of a target profile and a target critical dimension for the at least one feature.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20041116&DB=EPODOC&CC=US&NR=6818561B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20041116&DB=EPODOC&CC=US&NR=6818561B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SONDERMAN THOMAS J</creatorcontrib><title>Control methodology using optical emission spectroscopy derived data, system for performing same</title><description>The present invention is generally directed to various control methodologies using optical emission spectroscopy derived data, and a system for performing same. In one illustrative embodiment, the method comprises performing an etching process within an etch tool to define at least one feature above a semiconducting substrate, obtaining optical emission spectroscopy data for the etching process, and controlling at least one parameter of the etching process based upon a comparison of the obtained optical emission spectroscopy data and target optical emission spectroscopy data associated with at least one of a target profile and a target critical dimension for the at least one feature. In one illustrative embodiment, the system is comprised of an etch tool adapted to perform an etch process to define at least one feature, an optical emission spectroscopy sensor operatively coupled to the etch tool, and a controller for controlling at least one parameter of the etching process performed in the etch tool based upon a comparison between optical emission spectroscopy data obtained from the optical emission spectroscopy sensor and target optical emission spectroscopy data associated with at least one of a target profile and a target critical dimension for the at least one feature.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzLEKwjAURuEuDqK-w30AHYJYOlsUd3WuIflbA0luyI1C3t4KPoDTWT7Osnn0HEtmTwHlyZY9T5Ve4uJEnIoz2hOCE3EcSRLMbMVwqmSR3RuWrC56S1KlINDImRLynPA9iA5YN4tRe8Hm11VD59Otv-yQeIAkbRBRhvu17VR3aNVR7f8gH-t3PiQ</recordid><startdate>20041116</startdate><enddate>20041116</enddate><creator>SONDERMAN THOMAS J</creator><scope>EVB</scope></search><sort><creationdate>20041116</creationdate><title>Control methodology using optical emission spectroscopy derived data, system for performing same</title><author>SONDERMAN THOMAS J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US6818561B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2004</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>SONDERMAN THOMAS J</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SONDERMAN THOMAS J</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Control methodology using optical emission spectroscopy derived data, system for performing same</title><date>2004-11-16</date><risdate>2004</risdate><abstract>The present invention is generally directed to various control methodologies using optical emission spectroscopy derived data, and a system for performing same. In one illustrative embodiment, the method comprises performing an etching process within an etch tool to define at least one feature above a semiconducting substrate, obtaining optical emission spectroscopy data for the etching process, and controlling at least one parameter of the etching process based upon a comparison of the obtained optical emission spectroscopy data and target optical emission spectroscopy data associated with at least one of a target profile and a target critical dimension for the at least one feature. In one illustrative embodiment, the system is comprised of an etch tool adapted to perform an etch process to define at least one feature, an optical emission spectroscopy sensor operatively coupled to the etch tool, and a controller for controlling at least one parameter of the etching process performed in the etch tool based upon a comparison between optical emission spectroscopy data obtained from the optical emission spectroscopy sensor and target optical emission spectroscopy data associated with at least one of a target profile and a target critical dimension for the at least one feature.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING |
title | Control methodology using optical emission spectroscopy derived data, system for performing same |
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