Selective metal oxide removal performed in a reaction chamber in the absence of RF activation

A metal oxide, utilized as a gate dielectric, is removed using a combination of gaseous HCl (HCl), heat, and an absence of rf. The metal oxide, which is preferably hafnium oxide, is effectively removed in the areas not under the gate electrode. The use of HCl results in the interfacial oxide that un...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HOBBS CHRISTOPHER C, TOBIN PHILIP J
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!