Active semiconductor backplanes

Relates to constructions of a backplane which comprises an array of addressable active elements 52 on a semiconductor substrate 51 for selectively energizing respective first electrodes 65 of the array, for example in a liquid crystal matrix cell. To reduce photo-induced degradation of images produc...

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Bibliographische Detailangaben
1. Verfasser: CROSSLAND WILLIAM A
Format: Patent
Sprache:eng
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Zusammenfassung:Relates to constructions of a backplane which comprises an array of addressable active elements 52 on a semiconductor substrate 51 for selectively energizing respective first electrodes 65 of the array, for example in a liquid crystal matrix cell. To reduce photo-induced degradation of images produced thereby (a) at least part of the region beneath a first electrode is adapted to act as a capacitor, for example a depletion layer 66 acting as a reverse biased diode, and/or (b) substantially the whole of each active element is covered by a metallic conductor (59, 60-coupled to row and column conductors). In a variant of (b) the array of active elements may covered by an insulating layer, and each active element is connected to a metal electrode on the insulating layer, the array of said metal electrodes thus formed covering more than 65% of the area of said array.