Active semiconductor backplanes
Relates to constructions of a backplane which comprises an array of addressable active elements 52 on a semiconductor substrate 51 for selectively energizing respective first electrodes 65 of the array, for example in a liquid crystal matrix cell. To reduce photo-induced degradation of images produc...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Relates to constructions of a backplane which comprises an array of addressable active elements 52 on a semiconductor substrate 51 for selectively energizing respective first electrodes 65 of the array, for example in a liquid crystal matrix cell. To reduce photo-induced degradation of images produced thereby (a) at least part of the region beneath a first electrode is adapted to act as a capacitor, for example a depletion layer 66 acting as a reverse biased diode, and/or (b) substantially the whole of each active element is covered by a metallic conductor (59, 60-coupled to row and column conductors). In a variant of (b) the array of active elements may covered by an insulating layer, and each active element is connected to a metal electrode on the insulating layer, the array of said metal electrodes thus formed covering more than 65% of the area of said array. |
---|