Method and apparatus for suppressing the channeling effect in high energy deep well implantation

The invention provides an improved well structure for electrically separating n-channel and p-channel MOSFETs. The invention first forms a shallow well in a substrate. A buried amorphous layer is then formed below the shallow well. A deep well is then formed below the buried amorphous layer. The sub...

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Bibliographische Detailangaben

Hauptverfasser:	YU BIN, NG CHE-HOO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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