Oxidation process to improve polysilicon sidewall roughness

A new step is provided for the creation of polysilicon gate electrode structures. A layer of polysilicon is deposited over the surface of a layer of semiconductor material, the layer of polysilicon is etched using a layer of hardmask material for this purpose. The etch of the layer of polysilicon is...

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1. Verfasser:	CHANG MINGING
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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