Thyristor having one or more doped layers
A method is provided for forming one or more doped layers using ion-implantation in the fabrication of thyristor devices. For example, these thyristors may be made from single crystalline silicon carbide. According to one aspect of the invention, one of the required layers is formed by introducing d...
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| creator | FEDISON JEFFREY B CHOW TATSING P |
| description | A method is provided for forming one or more doped layers using ion-implantation in the fabrication of thyristor devices. For example, these thyristors may be made from single crystalline silicon carbide. According to one aspect of the invention, one of the required layers is formed by introducing dopants after crystal growth as opposed to conventional methods which involve doping during crystal growth. Specifically, impurities may be introduced by using the technique of ion implantation. |
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For example, these thyristors may be made from single crystalline silicon carbide. According to one aspect of the invention, one of the required layers is formed by introducing dopants after crystal growth as opposed to conventional methods which involve doping during crystal growth. 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For example, these thyristors may be made from single crystalline silicon carbide. According to one aspect of the invention, one of the required layers is formed by introducing dopants after crystal growth as opposed to conventional methods which involve doping during crystal growth. Specifically, impurities may be introduced by using the technique of ion implantation.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAMyagsyiwuyS9SyEgsy8xLV8jPS1UA8nLzi1IVUvILUlMUchIrU4uKeRhY0xJzilN5oTQ3g4Kba4izh25qQX58anFBYnJqXmpJfGiwmbmFuYWhmZOhMRFKALdVKH0</recordid><startdate>20040907</startdate><enddate>20040907</enddate><creator>FEDISON JEFFREY B</creator><creator>CHOW TATSING P</creator><scope>EVB</scope></search><sort><creationdate>20040907</creationdate><title>Thyristor having one or more doped layers</title><author>FEDISON JEFFREY B ; CHOW TATSING P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US6787816B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2004</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>FEDISON JEFFREY B</creatorcontrib><creatorcontrib>CHOW TATSING P</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FEDISON JEFFREY B</au><au>CHOW TATSING P</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Thyristor having one or more doped layers</title><date>2004-09-07</date><risdate>2004</risdate><abstract>A method is provided for forming one or more doped layers using ion-implantation in the fabrication of thyristor devices. For example, these thyristors may be made from single crystalline silicon carbide. According to one aspect of the invention, one of the required layers is formed by introducing dopants after crystal growth as opposed to conventional methods which involve doping during crystal growth. Specifically, impurities may be introduced by using the technique of ion implantation.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| title | Thyristor having one or more doped layers |
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