Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrate

Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrate

The present invention provides a method for manufacturing a semiconductor device comprising a III-V semiconductor substrate, and an insulating layer deposited on the substrate by Atomic Layer Deposition (ALD). The use of ALD to deposit the insulating layer was found to facilitate the creation of act...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: YE PEIDE, WILK GLEN DAVID
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator YE PEIDE
WILK GLEN DAVID
description The present invention provides a method for manufacturing a semiconductor device comprising a III-V semiconductor substrate, and an insulating layer deposited on the substrate by Atomic Layer Deposition (ALD). The use of ALD to deposit the insulating layer was found to facilitate the creation of active devices that avoid Fermi layer pinning. In addition, such insulating layer may be advantageously used as a passivation layer in III-V substrate based active devices and transistors.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US6770536B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US6770536B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US6770536B23</originalsourceid><addsrcrecordid>eNqNjL8KwjAQh7s4iPoO9wKCWGx3i-IoqHO5Xq72IE1KLlF8e4M4OTn9_vDxzQt_Dp5YFXofQHkU8s4kinkZfggx9NgFIYziHYiD5yA0AOaqyebX3cHiiwPIxzGygQzij0tTpzFg5GUx69Eqr765KOB4uDanNU--ZZ2Q2HFsb5eqrje7stpvyz-QN8jAQzw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrate</title><source>esp@cenet</source><creator>YE PEIDE ; WILK GLEN DAVID</creator><creatorcontrib>YE PEIDE ; WILK GLEN DAVID</creatorcontrib><description>The present invention provides a method for manufacturing a semiconductor device comprising a III-V semiconductor substrate, and an insulating layer deposited on the substrate by Atomic Layer Deposition (ALD). The use of ALD to deposit the insulating layer was found to facilitate the creation of active devices that avoid Fermi layer pinning. In addition, such insulating layer may be advantageously used as a passivation layer in III-V substrate based active devices and transistors.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20040803&amp;DB=EPODOC&amp;CC=US&amp;NR=6770536B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20040803&amp;DB=EPODOC&amp;CC=US&amp;NR=6770536B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YE PEIDE</creatorcontrib><creatorcontrib>WILK GLEN DAVID</creatorcontrib><title>Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrate</title><description>The present invention provides a method for manufacturing a semiconductor device comprising a III-V semiconductor substrate, and an insulating layer deposited on the substrate by Atomic Layer Deposition (ALD). The use of ALD to deposit the insulating layer was found to facilitate the creation of active devices that avoid Fermi layer pinning. In addition, such insulating layer may be advantageously used as a passivation layer in III-V substrate based active devices and transistors.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjL8KwjAQh7s4iPoO9wKCWGx3i-IoqHO5Xq72IE1KLlF8e4M4OTn9_vDxzQt_Dp5YFXofQHkU8s4kinkZfggx9NgFIYziHYiD5yA0AOaqyebX3cHiiwPIxzGygQzij0tTpzFg5GUx69Eqr765KOB4uDanNU--ZZ2Q2HFsb5eqrje7stpvyz-QN8jAQzw</recordid><startdate>20040803</startdate><enddate>20040803</enddate><creator>YE PEIDE</creator><creator>WILK GLEN DAVID</creator><scope>EVB</scope></search><sort><creationdate>20040803</creationdate><title>Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrate</title><author>YE PEIDE ; WILK GLEN DAVID</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US6770536B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2004</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YE PEIDE</creatorcontrib><creatorcontrib>WILK GLEN DAVID</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YE PEIDE</au><au>WILK GLEN DAVID</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrate</title><date>2004-08-03</date><risdate>2004</risdate><abstract>The present invention provides a method for manufacturing a semiconductor device comprising a III-V semiconductor substrate, and an insulating layer deposited on the substrate by Atomic Layer Deposition (ALD). The use of ALD to deposit the insulating layer was found to facilitate the creation of active devices that avoid Fermi layer pinning. In addition, such insulating layer may be advantageously used as a passivation layer in III-V substrate based active devices and transistors.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US6770536B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrate
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T04%3A39%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YE%20PEIDE&rft.date=2004-08-03&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS6770536B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true