Plasma deposition method and system
There is provided a deposition technique wherein the amounts of eliminated F and H are small in the deposition of an insulating film, such as an SiOF film or an SiCHO film, which contains silicon, oxygen and other components and which has a lower dielectric constant than the dielectric constant of a...
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| creator | AKAHORI TAKASHI |
| description | There is provided a deposition technique wherein the amounts of eliminated F and H are small in the deposition of an insulating film, such as an SiOF film or an SiCHO film, which contains silicon, oxygen and other components and which has a lower dielectric constant than the dielectric constant of a silicon oxide film.A plasma processing system for producing plasma with the energy of a power applied between first and second electrodes which are provided in a vacuum vessel so as to face each other in parallel and which are connected to separate high-frequency power supplies, respectively, is used. An object to be processed, e.g., a semiconductor wafer is mounted on the first electrode. The frequency of the high-frequency power applied to the first electrode is set to be in the range of from 2 MHz to 9 MHz, and the frequency of the high-frequency power applied to the second electrode is set to be 50 MHz or higher, to deposit an insulating film on the wafer. |
| format | Patent |
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An object to be processed, e.g., a semiconductor wafer is mounted on the first electrode. 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An object to be processed, e.g., a semiconductor wafer is mounted on the first electrode. The frequency of the high-frequency power applied to the first electrode is set to be in the range of from 2 MHz to 9 MHz, and the frequency of the high-frequency power applied to the second electrode is set to be 50 MHz or higher, to deposit an insulating film on the wafer.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Plasma deposition method and system |
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