Silicon-based dielectric tunneling emitter

An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within whic...

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Bibliographische Detailangaben
Hauptverfasser: ENCK RONALD L, BICE MICHAEL DAVID, BENNING PAUL J, REGAN MICHAEL J, CHEN ZHIZHANG, NOVET THOMAS
Format: Patent
Sprache:eng
Schlagworte:
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