Semiconductor device

A die size is reduced in a semiconductor device which has a gate electrode formed on a first gate insulation film and a second gate insulation film, source and drain regions (N- layers and N+ layers) formed adjacent to the gate electrode and a channel region, wherein at least the gate electrode, the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	NISHIBE EIJI, KIKUCHI SUICHI, MOMEN MASAAKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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