Laminated diffusion barrier

A diffusion barrier that has a low dielectric constant, k, yet resistant to oxygen and/or moisture permeability is provided. The diffusion barrier includes a dielectric stack having at least two or more dielectric films, each film having a dielectric constant of about 8 or less, wherein the dielectr...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: FITZSIMMONS JOHN ANTHONY, BARTH EDWARD PAUL, IVERS THOMAS HENRY, COHEN STEPHAN A, RESTAINO DARRYL D, WILDMAN HORATIO SEYMOUR, PURUSHOTHAMAN SAMPATH, DZIOBKOWSKI CHESTER, GATES STEPHEN MCCONNELL
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator FITZSIMMONS JOHN ANTHONY
BARTH EDWARD PAUL
IVERS THOMAS HENRY
COHEN STEPHAN A
RESTAINO DARRYL D
WILDMAN HORATIO SEYMOUR
PURUSHOTHAMAN SAMPATH
DZIOBKOWSKI CHESTER
GATES STEPHEN MCCONNELL
description A diffusion barrier that has a low dielectric constant, k, yet resistant to oxygen and/or moisture permeability is provided. The diffusion barrier includes a dielectric stack having at least two or more dielectric films, each film having a dielectric constant of about 8 or less, wherein the dielectric stack comprises alternating films composed of a high-permeability material and a low-permeability material. A semiconductor structure including substrate having at least one wiring region and the inventive diffusion barrier formed on a surface of the substrate is also provided.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US6726996B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US6726996B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US6726996B23</originalsourceid><addsrcrecordid>eNrjZJD2SczNzEssSU1RSMlMSystzszPU0hKLCrKTC3iYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxocFm5kZmlpZmTkbGRCgBAEUqI2s</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Laminated diffusion barrier</title><source>esp@cenet</source><creator>FITZSIMMONS JOHN ANTHONY ; BARTH EDWARD PAUL ; IVERS THOMAS HENRY ; COHEN STEPHAN A ; RESTAINO DARRYL D ; WILDMAN HORATIO SEYMOUR ; PURUSHOTHAMAN SAMPATH ; DZIOBKOWSKI CHESTER ; GATES STEPHEN MCCONNELL</creator><creatorcontrib>FITZSIMMONS JOHN ANTHONY ; BARTH EDWARD PAUL ; IVERS THOMAS HENRY ; COHEN STEPHAN A ; RESTAINO DARRYL D ; WILDMAN HORATIO SEYMOUR ; PURUSHOTHAMAN SAMPATH ; DZIOBKOWSKI CHESTER ; GATES STEPHEN MCCONNELL</creatorcontrib><description>A diffusion barrier that has a low dielectric constant, k, yet resistant to oxygen and/or moisture permeability is provided. The diffusion barrier includes a dielectric stack having at least two or more dielectric films, each film having a dielectric constant of about 8 or less, wherein the dielectric stack comprises alternating films composed of a high-permeability material and a low-permeability material. A semiconductor structure including substrate having at least one wiring region and the inventive diffusion barrier formed on a surface of the substrate is also provided.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC ; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS ; LAYERED PRODUCTS ; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM ; PERFORMING OPERATIONS ; SEMICONDUCTOR DEVICES ; TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ; TECHNICAL SUBJECTS COVERED BY FORMER USPC ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ; TRANSPORTING</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20040427&amp;DB=EPODOC&amp;CC=US&amp;NR=6726996B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20040427&amp;DB=EPODOC&amp;CC=US&amp;NR=6726996B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FITZSIMMONS JOHN ANTHONY</creatorcontrib><creatorcontrib>BARTH EDWARD PAUL</creatorcontrib><creatorcontrib>IVERS THOMAS HENRY</creatorcontrib><creatorcontrib>COHEN STEPHAN A</creatorcontrib><creatorcontrib>RESTAINO DARRYL D</creatorcontrib><creatorcontrib>WILDMAN HORATIO SEYMOUR</creatorcontrib><creatorcontrib>PURUSHOTHAMAN SAMPATH</creatorcontrib><creatorcontrib>DZIOBKOWSKI CHESTER</creatorcontrib><creatorcontrib>GATES STEPHEN MCCONNELL</creatorcontrib><title>Laminated diffusion barrier</title><description>A diffusion barrier that has a low dielectric constant, k, yet resistant to oxygen and/or moisture permeability is provided. The diffusion barrier includes a dielectric stack having at least two or more dielectric films, each film having a dielectric constant of about 8 or less, wherein the dielectric stack comprises alternating films composed of a high-permeability material and a low-permeability material. A semiconductor structure including substrate having at least one wiring region and the inventive diffusion barrier formed on a surface of the substrate is also provided.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</subject><subject>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</subject><subject>LAYERED PRODUCTS</subject><subject>LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM</subject><subject>PERFORMING OPERATIONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJD2SczNzEssSU1RSMlMSystzszPU0hKLCrKTC3iYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxocFm5kZmlpZmTkbGRCgBAEUqI2s</recordid><startdate>20040427</startdate><enddate>20040427</enddate><creator>FITZSIMMONS JOHN ANTHONY</creator><creator>BARTH EDWARD PAUL</creator><creator>IVERS THOMAS HENRY</creator><creator>COHEN STEPHAN A</creator><creator>RESTAINO DARRYL D</creator><creator>WILDMAN HORATIO SEYMOUR</creator><creator>PURUSHOTHAMAN SAMPATH</creator><creator>DZIOBKOWSKI CHESTER</creator><creator>GATES STEPHEN MCCONNELL</creator><scope>EVB</scope></search><sort><creationdate>20040427</creationdate><title>Laminated diffusion barrier</title><author>FITZSIMMONS JOHN ANTHONY ; BARTH EDWARD PAUL ; IVERS THOMAS HENRY ; COHEN STEPHAN A ; RESTAINO DARRYL D ; WILDMAN HORATIO SEYMOUR ; PURUSHOTHAMAN SAMPATH ; DZIOBKOWSKI CHESTER ; GATES STEPHEN MCCONNELL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US6726996B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2004</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</topic><topic>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</topic><topic>LAYERED PRODUCTS</topic><topic>LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM</topic><topic>PERFORMING OPERATIONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>FITZSIMMONS JOHN ANTHONY</creatorcontrib><creatorcontrib>BARTH EDWARD PAUL</creatorcontrib><creatorcontrib>IVERS THOMAS HENRY</creatorcontrib><creatorcontrib>COHEN STEPHAN A</creatorcontrib><creatorcontrib>RESTAINO DARRYL D</creatorcontrib><creatorcontrib>WILDMAN HORATIO SEYMOUR</creatorcontrib><creatorcontrib>PURUSHOTHAMAN SAMPATH</creatorcontrib><creatorcontrib>DZIOBKOWSKI CHESTER</creatorcontrib><creatorcontrib>GATES STEPHEN MCCONNELL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FITZSIMMONS JOHN ANTHONY</au><au>BARTH EDWARD PAUL</au><au>IVERS THOMAS HENRY</au><au>COHEN STEPHAN A</au><au>RESTAINO DARRYL D</au><au>WILDMAN HORATIO SEYMOUR</au><au>PURUSHOTHAMAN SAMPATH</au><au>DZIOBKOWSKI CHESTER</au><au>GATES STEPHEN MCCONNELL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Laminated diffusion barrier</title><date>2004-04-27</date><risdate>2004</risdate><abstract>A diffusion barrier that has a low dielectric constant, k, yet resistant to oxygen and/or moisture permeability is provided. The diffusion barrier includes a dielectric stack having at least two or more dielectric films, each film having a dielectric constant of about 8 or less, wherein the dielectric stack comprises alternating films composed of a high-permeability material and a low-permeability material. A semiconductor structure including substrate having at least one wiring region and the inventive diffusion barrier formed on a surface of the substrate is also provided.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US6726996B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
LAYERED PRODUCTS
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
TECHNICAL SUBJECTS COVERED BY FORMER USPC
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
TRANSPORTING
title Laminated diffusion barrier
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-22T22%3A38%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=FITZSIMMONS%20JOHN%20ANTHONY&rft.date=2004-04-27&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS6726996B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true