In situ proximity gap monitor for lithography

A method and a system for implementing the method for determining an exposure gap between a mask and a resist material are provided. A first gratings is provided on one or more sides of a first structure defined by one or more first regions of the mask. A second gratings is provided on one or more s...

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Bibliographische Detailangaben

1. Verfasser:	CHEN ALEK C
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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