Method to form gate conductor structures of dual doped polysilicon

A method for manufacturing a semiconductor chip which has transistors is disclosed. The transistors include first type transistors which have a first type of doping and second type transistors which have a second type of doping different than the first type of doping. The method includes forming a c...

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Bibliographische Detailangaben

Hauptverfasser:	TSOU LEN Y, BROWN JEFFREY J, YANG QINGYUN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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