Contact ring architecture
An integrated circuit with a VDDio bus line disposed on a first layer of the integrated circuit. The VDDio bus line is disposed along a length, and has a first width transverse to the length. A VSSio bus line is dispose on a second layer of the integrated circuit. The VSSio bus line is disposed alon...
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creator | YEUNG MAX M LAU TAUMAN T ALI ANWAR |
description | An integrated circuit with a VDDio bus line disposed on a first layer of the integrated circuit. The VDDio bus line is disposed along a length, and has a first width transverse to the length. A VSSio bus line is dispose on a second layer of the integrated circuit. The VSSio bus line is disposed along the length and has a second width transverse to the length. The second width of the VSSio bus line substantially overlaps the first width of the VDDio bus line. An input output cell is disposed on a third layer of the integrated circuit. The first layer, the second layer, and the third layer are all different layers of the integrated circuit. The input output cell has a first transistor electrically connected to the VDDio bus line, and a second transistor electrically connected to the VSSio bus line. The first transistor and the second transistor are disposed along the length within the input output cell. |
format | Patent |
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A VSSio bus line is dispose on a second layer of the integrated circuit. The VSSio bus line is disposed along the length and has a second width transverse to the length. The second width of the VSSio bus line substantially overlaps the first width of the VDDio bus line. An input output cell is disposed on a third layer of the integrated circuit. The first layer, the second layer, and the third layer are all different layers of the integrated circuit. The input output cell has a first transistor electrically connected to the VDDio bus line, and a second transistor electrically connected to the VSSio bus line. The first transistor and the second transistor are disposed along the length within the input output cell.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040127&DB=EPODOC&CC=US&NR=6683476B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040127&DB=EPODOC&CC=US&NR=6683476B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YEUNG MAX M</creatorcontrib><creatorcontrib>LAU TAUMAN T</creatorcontrib><creatorcontrib>ALI ANWAR</creatorcontrib><title>Contact ring architecture</title><description>An integrated circuit with a VDDio bus line disposed on a first layer of the integrated circuit. The VDDio bus line is disposed along a length, and has a first width transverse to the length. A VSSio bus line is dispose on a second layer of the integrated circuit. The VSSio bus line is disposed along the length and has a second width transverse to the length. The second width of the VSSio bus line substantially overlaps the first width of the VDDio bus line. An input output cell is disposed on a third layer of the integrated circuit. The first layer, the second layer, and the third layer are all different layers of the integrated circuit. The input output cell has a first transistor electrically connected to the VDDio bus line, and a second transistor electrically connected to the VSSio bus line. The first transistor and the second transistor are disposed along the length within the input output cell.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJB0zs8rSUwuUSjKzEtXSCxKzsgsSU0uKS1K5WFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8aHBZmYWxibmZk5GxkQoAQDtwSKh</recordid><startdate>20040127</startdate><enddate>20040127</enddate><creator>YEUNG MAX M</creator><creator>LAU TAUMAN T</creator><creator>ALI ANWAR</creator><scope>EVB</scope></search><sort><creationdate>20040127</creationdate><title>Contact ring architecture</title><author>YEUNG MAX M ; LAU TAUMAN T ; ALI ANWAR</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US6683476B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2004</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YEUNG MAX M</creatorcontrib><creatorcontrib>LAU TAUMAN T</creatorcontrib><creatorcontrib>ALI ANWAR</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YEUNG MAX M</au><au>LAU TAUMAN T</au><au>ALI ANWAR</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Contact ring architecture</title><date>2004-01-27</date><risdate>2004</risdate><abstract>An integrated circuit with a VDDio bus line disposed on a first layer of the integrated circuit. The VDDio bus line is disposed along a length, and has a first width transverse to the length. A VSSio bus line is dispose on a second layer of the integrated circuit. The VSSio bus line is disposed along the length and has a second width transverse to the length. The second width of the VSSio bus line substantially overlaps the first width of the VDDio bus line. An input output cell is disposed on a third layer of the integrated circuit. The first layer, the second layer, and the third layer are all different layers of the integrated circuit. The input output cell has a first transistor electrically connected to the VDDio bus line, and a second transistor electrically connected to the VSSio bus line. The first transistor and the second transistor are disposed along the length within the input output cell.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Contact ring architecture |
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