Integrated low k dielectrics and etch stops
A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric...
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| creator | TANG BETTY LIU KUOWEI CHEUNG DAVID W YU MIN MELISSA CHAPRA NASREEN GAZALA BJORKMAN CLAES H YOST DENNIS YAU WAI-FAN SHAN HONGQUING YIN GERALD KIM YUNSANG HUANG JUDY H MOGHADAM FARHAD K |
| description | A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US6669858B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US6669858B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US6669858B23</originalsourceid><addsrcrecordid>eNrjZND2zCtJTS9KLElNUcjJL1fIVkjJTM1JTS4pykwuVkjMS1FILUnOUCguyS8o5mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8aHBZmZmlhamFk5GxkQoAQAFnykj</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Integrated low k dielectrics and etch stops</title><source>esp@cenet</source><creator>TANG BETTY ; LIU KUOWEI ; CHEUNG DAVID W ; YU MIN MELISSA ; CHAPRA NASREEN GAZALA ; BJORKMAN CLAES H ; YOST DENNIS ; YAU WAI-FAN ; SHAN HONGQUING ; YIN GERALD ; KIM YUNSANG ; HUANG JUDY H ; MOGHADAM FARHAD K</creator><creatorcontrib>TANG BETTY ; LIU KUOWEI ; CHEUNG DAVID W ; YU MIN MELISSA ; CHAPRA NASREEN GAZALA ; BJORKMAN CLAES H ; YOST DENNIS ; YAU WAI-FAN ; SHAN HONGQUING ; YIN GERALD ; KIM YUNSANG ; HUANG JUDY H ; MOGHADAM FARHAD K</creatorcontrib><description>A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.</description><edition>7</edition><language>eng</language><subject>AGRICULTURE ; ANIMAL HUSBANDRY ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FERTILISING ; FISHING ; FORESTRY ; HUMAN NECESSITIES ; HUNTING ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PLANTING ; SEMICONDUCTOR DEVICES ; SOWING ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRAPPING</subject><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20031230&DB=EPODOC&CC=US&NR=6669858B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20031230&DB=EPODOC&CC=US&NR=6669858B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TANG BETTY</creatorcontrib><creatorcontrib>LIU KUOWEI</creatorcontrib><creatorcontrib>CHEUNG DAVID W</creatorcontrib><creatorcontrib>YU MIN MELISSA</creatorcontrib><creatorcontrib>CHAPRA NASREEN GAZALA</creatorcontrib><creatorcontrib>BJORKMAN CLAES H</creatorcontrib><creatorcontrib>YOST DENNIS</creatorcontrib><creatorcontrib>YAU WAI-FAN</creatorcontrib><creatorcontrib>SHAN HONGQUING</creatorcontrib><creatorcontrib>YIN GERALD</creatorcontrib><creatorcontrib>KIM YUNSANG</creatorcontrib><creatorcontrib>HUANG JUDY H</creatorcontrib><creatorcontrib>MOGHADAM FARHAD K</creatorcontrib><title>Integrated low k dielectrics and etch stops</title><description>A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.</description><subject>AGRICULTURE</subject><subject>ANIMAL HUSBANDRY</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FERTILISING</subject><subject>FISHING</subject><subject>FORESTRY</subject><subject>HUMAN NECESSITIES</subject><subject>HUNTING</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PLANTING</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SOWING</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRAPPING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND2zCtJTS9KLElNUcjJL1fIVkjJTM1JTS4pykwuVkjMS1FILUnOUCguyS8o5mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8aHBZmZmlhamFk5GxkQoAQAFnykj</recordid><startdate>20031230</startdate><enddate>20031230</enddate><creator>TANG BETTY</creator><creator>LIU KUOWEI</creator><creator>CHEUNG DAVID W</creator><creator>YU MIN MELISSA</creator><creator>CHAPRA NASREEN GAZALA</creator><creator>BJORKMAN CLAES H</creator><creator>YOST DENNIS</creator><creator>YAU WAI-FAN</creator><creator>SHAN HONGQUING</creator><creator>YIN GERALD</creator><creator>KIM YUNSANG</creator><creator>HUANG JUDY H</creator><creator>MOGHADAM FARHAD K</creator><scope>EVB</scope></search><sort><creationdate>20031230</creationdate><title>Integrated low k dielectrics and etch stops</title><author>TANG BETTY ; LIU KUOWEI ; CHEUNG DAVID W ; YU MIN MELISSA ; CHAPRA NASREEN GAZALA ; BJORKMAN CLAES H ; YOST DENNIS ; YAU WAI-FAN ; SHAN HONGQUING ; YIN GERALD ; KIM YUNSANG ; HUANG JUDY H ; MOGHADAM FARHAD K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US6669858B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><topic>AGRICULTURE</topic><topic>ANIMAL HUSBANDRY</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FERTILISING</topic><topic>FISHING</topic><topic>FORESTRY</topic><topic>HUMAN NECESSITIES</topic><topic>HUNTING</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PLANTING</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SOWING</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRAPPING</topic><toplevel>online_resources</toplevel><creatorcontrib>TANG BETTY</creatorcontrib><creatorcontrib>LIU KUOWEI</creatorcontrib><creatorcontrib>CHEUNG DAVID W</creatorcontrib><creatorcontrib>YU MIN MELISSA</creatorcontrib><creatorcontrib>CHAPRA NASREEN GAZALA</creatorcontrib><creatorcontrib>BJORKMAN CLAES H</creatorcontrib><creatorcontrib>YOST DENNIS</creatorcontrib><creatorcontrib>YAU WAI-FAN</creatorcontrib><creatorcontrib>SHAN HONGQUING</creatorcontrib><creatorcontrib>YIN GERALD</creatorcontrib><creatorcontrib>KIM YUNSANG</creatorcontrib><creatorcontrib>HUANG JUDY H</creatorcontrib><creatorcontrib>MOGHADAM FARHAD K</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TANG BETTY</au><au>LIU KUOWEI</au><au>CHEUNG DAVID W</au><au>YU MIN MELISSA</au><au>CHAPRA NASREEN GAZALA</au><au>BJORKMAN CLAES H</au><au>YOST DENNIS</au><au>YAU WAI-FAN</au><au>SHAN HONGQUING</au><au>YIN GERALD</au><au>KIM YUNSANG</au><au>HUANG JUDY H</au><au>MOGHADAM FARHAD K</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Integrated low k dielectrics and etch stops</title><date>2003-12-30</date><risdate>2003</risdate><abstract>A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | AGRICULTURE ANIMAL HUSBANDRY BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERTILISING FISHING FORESTRY HUMAN NECESSITIES HUNTING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLANTING SEMICONDUCTOR DEVICES SOWING SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRAPPING |
| title | Integrated low k dielectrics and etch stops |
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