Heterojunction semiconductor device and method of manufacturing

A semiconductor component (100) includes a semiconductor substrate (16) that is formed with trench (27). A semiconductor layer (20) is formed in the trench for coupling a control signal (VB) through a sidewall (25) of the trench to route a current (Ic) through a bottom surface (23) of the trench.

Bibliographische Detailangaben

Hauptverfasser:	AZAM MISBAHUL, LOECHELT GARY, COSTA JULIO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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