Method and structure for salicide trench capacitor plate electrode

The present invention is a method and structure for fabricating a trench capacitor within a semiconductor substrate having a buried plate electrode formed of metal silicide. A collar is formed in a trench etched into a substrate; a conformal metal film is deposited thereover, and is annealed to form...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHUDZIK MICHAEL PATRICK, SETTLEMYER, JR. KENNETH T, JAMMY RAJARAO, RADENS CARL JOHN, MANDELMAN JACK ALLAN, SHAFER PADRAIC C, SHEPARD, JR. JOSEPH F
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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