Low dielectric constant materials prepared from photon or plasma assisted chemical vapor deposition and transport polymerization of selected compounds

Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2.0 to 2.6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepared from PACVD or TP of some selected siloxan...

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Bibliographische Detailangaben
Hauptverfasser: FOGGIATO GIOVANNI ANTONIO, LEE CHUNG J, WANG HUI
Format: Patent
Sprache:eng
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