Low dielectric constant materials prepared from photon or plasma assisted chemical vapor deposition and transport polymerization of selected compounds
Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2.0 to 2.6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepared from PACVD or TP of some selected siloxan...
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| creator | FOGGIATO GIOVANNI ANTONIO LEE CHUNG J WANG HUI |
| description | Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2.0 to 2.6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepared from PACVD or TP of some selected siloxanes and F-containing aromatic compounds. The thin films combine barrier and adhesion layer functions with low dielectric constant functions, thus eliminating the necessity for separate adhesion and barrier layers, and layers of low dielectric constant. The LKD materials disclosed in this invention are particularly useful for |
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The low K dielectric (LKD) materials are prepared from PACVD or TP of some selected siloxanes and F-containing aromatic compounds. The thin films combine barrier and adhesion layer functions with low dielectric constant functions, thus eliminating the necessity for separate adhesion and barrier layers, and layers of low dielectric constant. The LKD materials disclosed in this invention are particularly useful for <0.18 mum ICs, or when copper is used as conductor in future ICs.</description><edition>7</edition><language>eng</language><subject>ADHESIVES ; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G ; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL ; BASIC ELECTRIC ELEMENTS ; CHEMICAL PAINT OR INK REMOVERS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOSITIONS BASED THEREON ; CORRECTING FLUIDS ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FILLING PASTES ; GENERAL PROCESSES OF COMPOUNDING ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INKS ; LAYERED PRODUCTS ; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; ORGANIC MACROMOLECULAR COMPOUNDS ; PAINTS ; PASTES OR SOLIDS FOR COLOURING OR PRINTING ; PERFORMING OPERATIONS ; PLASMA TECHNIQUE ; POLISHES ; PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL ; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS ; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS ; SEMICONDUCTOR DEVICES ; SPRAYING OR ATOMISING IN GENERAL ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; THEIR PREPARATION OR CHEMICAL WORKING-UP ; TRANSPORTING ; USE OF MATERIALS THEREFOR ; WOODSTAINS ; WORKING-UP</subject><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20031216&DB=EPODOC&CC=US&NR=6663973B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76302</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20031216&DB=EPODOC&CC=US&NR=6663973B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FOGGIATO GIOVANNI ANTONIO</creatorcontrib><creatorcontrib>LEE CHUNG J</creatorcontrib><creatorcontrib>WANG HUI</creatorcontrib><title>Low dielectric constant materials prepared from photon or plasma assisted chemical vapor deposition and transport polymerization of selected compounds</title><description>Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2.0 to 2.6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepared from PACVD or TP of some selected siloxanes and F-containing aromatic compounds. The thin films combine barrier and adhesion layer functions with low dielectric constant functions, thus eliminating the necessity for separate adhesion and barrier layers, and layers of low dielectric constant. The LKD materials disclosed in this invention are particularly useful for <0.18 mum ICs, or when copper is used as conductor in future ICs.</description><subject>ADHESIVES</subject><subject>AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G</subject><subject>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL PAINT OR INK REMOVERS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOSITIONS BASED THEREON</subject><subject>CORRECTING FLUIDS</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FILLING PASTES</subject><subject>GENERAL PROCESSES OF COMPOUNDING</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INKS</subject><subject>LAYERED PRODUCTS</subject><subject>LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>ORGANIC MACROMOLECULAR COMPOUNDS</subject><subject>PAINTS</subject><subject>PASTES OR SOLIDS FOR COLOURING OR PRINTING</subject><subject>PERFORMING OPERATIONS</subject><subject>PLASMA TECHNIQUE</subject><subject>POLISHES</subject><subject>PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL</subject><subject>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</subject><subject>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SPRAYING OR ATOMISING IN GENERAL</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><subject>TRANSPORTING</subject><subject>USE OF MATERIALS THEREFOR</subject><subject>WOODSTAINS</subject><subject>WORKING-UP</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjTEKAjEQRbexEPUOcwELWVixVRQLO7VehmQWA0lmyIyKHsTzGsUDWH347_P-uHkd-A4-UCRnJThwnNUwGyQ0KgGjghQSLORhKJxALmycgQtIRE0IqBrUKnYXSsFhhBtKxZ6ENVioY8werGDW2hsIx0eq7id-IQ-g3_uPgpPwNXudNqOhftPsl5MGdtvTZj-v0p5U0FEm68_Hruva1bJdL9o_Jm8IRlMp</recordid><startdate>20031216</startdate><enddate>20031216</enddate><creator>FOGGIATO GIOVANNI ANTONIO</creator><creator>LEE CHUNG J</creator><creator>WANG HUI</creator><scope>EVB</scope></search><sort><creationdate>20031216</creationdate><title>Low dielectric constant materials prepared from photon or plasma assisted chemical vapor deposition and transport polymerization of selected compounds</title><author>FOGGIATO GIOVANNI ANTONIO ; LEE CHUNG J ; WANG HUI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US6663973B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><topic>ADHESIVES</topic><topic>AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G</topic><topic>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL PAINT OR INK REMOVERS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOSITIONS BASED THEREON</topic><topic>CORRECTING FLUIDS</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FILLING PASTES</topic><topic>GENERAL PROCESSES OF COMPOUNDING</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INKS</topic><topic>LAYERED PRODUCTS</topic><topic>LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>ORGANIC MACROMOLECULAR COMPOUNDS</topic><topic>PAINTS</topic><topic>PASTES OR SOLIDS FOR COLOURING OR PRINTING</topic><topic>PERFORMING OPERATIONS</topic><topic>PLASMA TECHNIQUE</topic><topic>POLISHES</topic><topic>PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL</topic><topic>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</topic><topic>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SPRAYING OR ATOMISING IN GENERAL</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>THEIR PREPARATION OR CHEMICAL WORKING-UP</topic><topic>TRANSPORTING</topic><topic>USE OF MATERIALS THEREFOR</topic><topic>WOODSTAINS</topic><topic>WORKING-UP</topic><toplevel>online_resources</toplevel><creatorcontrib>FOGGIATO GIOVANNI ANTONIO</creatorcontrib><creatorcontrib>LEE CHUNG J</creatorcontrib><creatorcontrib>WANG HUI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FOGGIATO GIOVANNI ANTONIO</au><au>LEE CHUNG J</au><au>WANG HUI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Low dielectric constant materials prepared from photon or plasma assisted chemical vapor deposition and transport polymerization of selected compounds</title><date>2003-12-16</date><risdate>2003</risdate><abstract>Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2.0 to 2.6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepared from PACVD or TP of some selected siloxanes and F-containing aromatic compounds. The thin films combine barrier and adhesion layer functions with low dielectric constant functions, thus eliminating the necessity for separate adhesion and barrier layers, and layers of low dielectric constant. The LKD materials disclosed in this invention are particularly useful for <0.18 mum ICs, or when copper is used as conductor in future ICs.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | ADHESIVES AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS CHEMICAL PAINT OR INK REMOVERS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS BASED THEREON CORRECTING FLUIDS DIFFUSION TREATMENT OF METALLIC MATERIAL DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY FILLING PASTES GENERAL PROCESSES OF COMPOUNDING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INKS LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS ORGANIC MACROMOLECULAR COMPOUNDS PAINTS PASTES OR SOLIDS FOR COLOURING OR PRINTING PERFORMING OPERATIONS PLASMA TECHNIQUE POLISHES PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SPRAYING OR ATOMISING IN GENERAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR PREPARATION OR CHEMICAL WORKING-UP TRANSPORTING USE OF MATERIALS THEREFOR WOODSTAINS WORKING-UP |
| title | Low dielectric constant materials prepared from photon or plasma assisted chemical vapor deposition and transport polymerization of selected compounds |
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