Ceramics and method of preparing the same
Ceramics containing a diopside crystal phase and a cordierite phase, the remainder being a glass phase and/or other ceramic crystal phases, and having an open porosity of not larger than 1%. The ceramics is obtained by firing at from 800 to 1050° C., and exhibits a dielectric constant of not larger...
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| creator | IWACHI HIROMI TERASHI YOSHITAKE IRYO TSUTAE |
| description | Ceramics containing a diopside crystal phase and a cordierite phase, the remainder being a glass phase and/or other ceramic crystal phases, and having an open porosity of not larger than 1%. The ceramics is obtained by firing at from 800 to 1050° C., and exhibits a dielectric constant of not larger than 7 and a small dielectric loss in a high-frequency region, a ceramic strength of not smaller than 250 MPa, and a coefficient of thermal expansion close to those of the chips such as of Si and Ga-As and of the printed board. |
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The ceramics is obtained by firing at from 800 to 1050° C., and exhibits a dielectric constant of not larger than 7 and a small dielectric loss in a high-frequency region, a ceramic strength of not smaller than 250 MPa, and a coefficient of thermal expansion close to those of the chips such as of Si and Ga-As and of the printed board.</description><edition>7</edition><language>eng</language><subject>ARTIFICIAL STONE ; BASIC ELECTRIC ELEMENTS ; CABLES ; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ; CEMENTS ; CERAMICS ; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS ; CHEMISTRY ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; CONDUCTORS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GLASS ; INSULATORS ; JOINING GLASS TO GLASS OR OTHER MATERIALS ; LIME, MAGNESIA ; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS ; METALLURGY ; MINERAL OR SLAG WOOL ; PRINTED CIRCUITS ; REFRACTORIES ; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES ; SEMICONDUCTOR DEVICES ; SLAG ; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS ; SURFACE TREATMENT OF GLASS ; TREATMENT OF NATURAL STONE</subject><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20031209&DB=EPODOC&CC=US&NR=6660670B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20031209&DB=EPODOC&CC=US&NR=6660670B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>IWACHI HIROMI</creatorcontrib><creatorcontrib>TERASHI YOSHITAKE</creatorcontrib><creatorcontrib>IRYO TSUTAE</creatorcontrib><title>Ceramics and method of preparing the same</title><description>Ceramics containing a diopside crystal phase and a cordierite phase, the remainder being a glass phase and/or other ceramic crystal phases, and having an open porosity of not larger than 1%. The ceramics is obtained by firing at from 800 to 1050° C., and exhibits a dielectric constant of not larger than 7 and a small dielectric loss in a high-frequency region, a ceramic strength of not smaller than 250 MPa, and a coefficient of thermal expansion close to those of the chips such as of Si and Ga-As and of the printed board.</description><subject>ARTIFICIAL STONE</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CABLES</subject><subject>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS</subject><subject>CHEMISTRY</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>CONDUCTORS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GLASS</subject><subject>INSULATORS</subject><subject>JOINING GLASS TO GLASS OR OTHER MATERIALS</subject><subject>LIME, MAGNESIA</subject><subject>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</subject><subject>METALLURGY</subject><subject>MINERAL OR SLAG WOOL</subject><subject>PRINTED CIRCUITS</subject><subject>REFRACTORIES</subject><subject>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SLAG</subject><subject>SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS</subject><subject>SURFACE TREATMENT OF GLASS</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNB0Ti1KzM1MLlZIzEtRyE0tychPUchPUygoSi1ILMrMS1coyUhVKE7MTeVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhwWZmZgZm5gZORsZEKAEAhdkn_w</recordid><startdate>20031209</startdate><enddate>20031209</enddate><creator>IWACHI HIROMI</creator><creator>TERASHI YOSHITAKE</creator><creator>IRYO TSUTAE</creator><scope>EVB</scope></search><sort><creationdate>20031209</creationdate><title>Ceramics and method of preparing the same</title><author>IWACHI HIROMI ; TERASHI YOSHITAKE ; IRYO TSUTAE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US6660670B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><topic>ARTIFICIAL STONE</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CABLES</topic><topic>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS</topic><topic>CHEMISTRY</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>CONCRETE</topic><topic>CONDUCTORS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GLASS</topic><topic>INSULATORS</topic><topic>JOINING GLASS TO GLASS OR OTHER MATERIALS</topic><topic>LIME, MAGNESIA</topic><topic>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</topic><topic>METALLURGY</topic><topic>MINERAL OR SLAG WOOL</topic><topic>PRINTED CIRCUITS</topic><topic>REFRACTORIES</topic><topic>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SLAG</topic><topic>SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS</topic><topic>SURFACE TREATMENT OF GLASS</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>IWACHI HIROMI</creatorcontrib><creatorcontrib>TERASHI YOSHITAKE</creatorcontrib><creatorcontrib>IRYO TSUTAE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>IWACHI HIROMI</au><au>TERASHI YOSHITAKE</au><au>IRYO TSUTAE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Ceramics and method of preparing the same</title><date>2003-12-09</date><risdate>2003</risdate><abstract>Ceramics containing a diopside crystal phase and a cordierite phase, the remainder being a glass phase and/or other ceramic crystal phases, and having an open porosity of not larger than 1%. The ceramics is obtained by firing at from 800 to 1050° C., and exhibits a dielectric constant of not larger than 7 and a small dielectric loss in a high-frequency region, a ceramic strength of not smaller than 250 MPa, and a coefficient of thermal expansion close to those of the chips such as of Si and Ga-As and of the printed board.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CABLES CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CEMENTS CERAMICS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE CONDUCTORS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY GLASS INSULATORS JOINING GLASS TO GLASS OR OTHER MATERIALS LIME, MAGNESIA MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY MINERAL OR SLAG WOOL PRINTED CIRCUITS REFRACTORIES SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SEMICONDUCTOR DEVICES SLAG SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS TREATMENT OF NATURAL STONE |
| title | Ceramics and method of preparing the same |
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