Method of manufacturing a semiconductor device comprising MOS-transistors having gate oxides of different thicknesses

Method of manufacturing a semiconductor device comprising MOS-transistors of a first type (A) having a gate oxide (3) of a first thickness and MOS-transistors of a second type (B) having a gate oxide (10) of a second, greater thickness. In this method, active regions (4) and field oxide regions (5)...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	DRUIJF KLAAS GERBRAND, VAN DER MEER HENDRIK HUBERTUS
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!