Focused ion beam apparatus

Focused ion beam apparatus

The present invention achieves the quick and precise neutralization operation for wide area charge up and limited area charge up, both existing in a sample in a mixed manner at the same time, by having charge neutralizers separately provided for wide area charge up and limited area charge up respect...

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1. Verfasser: AITA KAZUO
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Sprache:eng
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APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM]
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
SCANNING-PROBE TECHNIQUES OR APPARATUS
SEMICONDUCTOR DEVICES
TESTING
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creator AITA KAZUO
description The present invention achieves the quick and precise neutralization operation for wide area charge up and limited area charge up, both existing in a sample in a mixed manner at the same time, by having charge neutralizers separately provided for wide area charge up and limited area charge up respectively, or by having a charge neutralizer with a scanning function, so that a beam can be scanned or stopped at the perceived area by a deflector, or having a charge neutralizer with an iris having a central opening and openings in the periphery of the central opening within the optical system, so that a quick and precise neutralization operation can be achieved with respect to wide area charge up and limited area charge up both existing in a sample in a mixed manner at the same time.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US6642512B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US6642512B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US6642512B23</originalsourceid><addsrcrecordid>eNrjZJByy08uLU5NUcjMz1NISk3MVUgsKEgsSiwpLeZhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhwWZmJkamhkZORsZEKAEA-RginA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Focused ion beam apparatus</title><source>esp@cenet</source><creator>AITA KAZUO</creator><creatorcontrib>AITA KAZUO</creatorcontrib><description>The present invention achieves the quick and precise neutralization operation for wide area charge up and limited area charge up, both existing in a sample in a mixed manner at the same time, by having charge neutralizers separately provided for wide area charge up and limited area charge up respectively, or by having a charge neutralizer with a scanning function, so that a beam can be scanned or stopped at the perceived area by a deflector, or having a charge neutralizer with an iris having a central opening and openings in the periphery of the central opening within the optical system, so that a quick and precise neutralization operation can be achieved with respect to wide area charge up and limited area charge up both existing in a sample in a mixed manner at the same time.</description><edition>7</edition><language>eng</language><subject>APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM] ; BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; SCANNING-PROBE TECHNIQUES OR APPARATUS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20031104&amp;DB=EPODOC&amp;CC=US&amp;NR=6642512B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20031104&amp;DB=EPODOC&amp;CC=US&amp;NR=6642512B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>AITA KAZUO</creatorcontrib><title>Focused ion beam apparatus</title><description>The present invention achieves the quick and precise neutralization operation for wide area charge up and limited area charge up, both existing in a sample in a mixed manner at the same time, by having charge neutralizers separately provided for wide area charge up and limited area charge up respectively, or by having a charge neutralizer with a scanning function, so that a beam can be scanned or stopped at the perceived area by a deflector, or having a charge neutralizer with an iris having a central opening and openings in the periphery of the central opening within the optical system, so that a quick and precise neutralization operation can be achieved with respect to wide area charge up and limited area charge up both existing in a sample in a mixed manner at the same time.</description><subject>APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM]</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>SCANNING-PROBE TECHNIQUES OR APPARATUS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJByy08uLU5NUcjMz1NISk3MVUgsKEgsSiwpLeZhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhwWZmJkamhkZORsZEKAEA-RginA</recordid><startdate>20031104</startdate><enddate>20031104</enddate><creator>AITA KAZUO</creator><scope>EVB</scope></search><sort><creationdate>20031104</creationdate><title>Focused ion beam apparatus</title><author>AITA KAZUO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US6642512B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><topic>APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM]</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>SCANNING-PROBE TECHNIQUES OR APPARATUS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>AITA KAZUO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>AITA KAZUO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Focused ion beam apparatus</title><date>2003-11-04</date><risdate>2003</risdate><abstract>The present invention achieves the quick and precise neutralization operation for wide area charge up and limited area charge up, both existing in a sample in a mixed manner at the same time, by having charge neutralizers separately provided for wide area charge up and limited area charge up respectively, or by having a charge neutralizer with a scanning function, so that a beam can be scanned or stopped at the perceived area by a deflector, or having a charge neutralizer with an iris having a central opening and openings in the periphery of the central opening within the optical system, so that a quick and precise neutralization operation can be achieved with respect to wide area charge up and limited area charge up both existing in a sample in a mixed manner at the same time.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
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subjects APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM]
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
SCANNING-PROBE TECHNIQUES OR APPARATUS
SEMICONDUCTOR DEVICES
TESTING
title Focused ion beam apparatus
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T09%3A29%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=AITA%20KAZUO&rft.date=2003-11-04&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS6642512B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true