Semiconductor device and method of manufacturing the same

A semiconductor device includes a semiconductor body (1) which is provided at a surface (2) with a non-volatile memory cell comprising a source (3) and a drain (4), and an access gate (14) which is electrically insulated from a gate structure (8) comprising a control gate (9), the gate structure (8)...

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Hauptverfasser:	WILS NICOLE ANNE HELENA FREDDY, WIDDERSHOVEN FRANCISCUS PETRUS, SLOTBOOM MICHIEL
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	WILS NICOLE ANNE HELENA FREDDY WIDDERSHOVEN FRANCISCUS PETRUS SLOTBOOM MICHIEL
description	A semiconductor device includes a semiconductor body (1) which is provided at a surface (2) with a non-volatile memory cell comprising a source (3) and a drain (4), and an access gate (14) which is electrically insulated from a gate structure (8) comprising a control gate (9), the gate structure (8) being electrically insulated from the semiconductor body (1) by a gate dielectric (11,25). The gate dielectric (11,25) is provided with a charge-storage region wherein data in the form of electric charge can be stored. The access gate (14) has a substantially flat surface portion (17) extending substantially parallel to the surface (2) of the semiconductor body (1) and has the shape of a block which is disposed against the gate structure (8) without overlapping the gate structure (8).
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US6642103B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US6642103B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US6642103B23</originalsourceid><addsrcrecordid>eNrjZLAMTs3NTM7PSylNLskvUkhJLctMTlVIzEtRyE0tychPUchPU8hNzCtNS0wuKS3KzEtXKMlIVShOzE3lYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxocFmZiZGhgbGTkbGRCgBAPUkLnE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device and method of manufacturing the same</title><source>esp@cenet</source><creator>WILS NICOLE ANNE HELENA FREDDY ; WIDDERSHOVEN FRANCISCUS PETRUS ; SLOTBOOM MICHIEL</creator><creatorcontrib>WILS NICOLE ANNE HELENA FREDDY ; WIDDERSHOVEN FRANCISCUS PETRUS ; SLOTBOOM MICHIEL</creatorcontrib><description>A semiconductor device includes a semiconductor body (1) which is provided at a surface (2) with a non-volatile memory cell comprising a source (3) and a drain (4), and an access gate (14) which is electrically insulated from a gate structure (8) comprising a control gate (9), the gate structure (8) being electrically insulated from the semiconductor body (1) by a gate dielectric (11,25). The gate dielectric (11,25) is provided with a charge-storage region wherein data in the form of electric charge can be stored. The access gate (14) has a substantially flat surface portion (17) extending substantially parallel to the surface (2) of the semiconductor body (1) and has the shape of a block which is disposed against the gate structure (8) without overlapping the gate structure (8).</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20031104&DB=EPODOC&CC=US&NR=6642103B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20031104&DB=EPODOC&CC=US&NR=6642103B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WILS NICOLE ANNE HELENA FREDDY</creatorcontrib><creatorcontrib>WIDDERSHOVEN FRANCISCUS PETRUS</creatorcontrib><creatorcontrib>SLOTBOOM MICHIEL</creatorcontrib><title>Semiconductor device and method of manufacturing the same</title><description>A semiconductor device includes a semiconductor body (1) which is provided at a surface (2) with a non-volatile memory cell comprising a source (3) and a drain (4), and an access gate (14) which is electrically insulated from a gate structure (8) comprising a control gate (9), the gate structure (8) being electrically insulated from the semiconductor body (1) by a gate dielectric (11,25). The gate dielectric (11,25) is provided with a charge-storage region wherein data in the form of electric charge can be stored. The access gate (14) has a substantially flat surface portion (17) extending substantially parallel to the surface (2) of the semiconductor body (1) and has the shape of a block which is disposed against the gate structure (8) without overlapping the gate structure (8).</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAMTs3NTM7PSylNLskvUkhJLctMTlVIzEtRyE0tychPUchPU8hNzCtNS0wuKS3KzEtXKMlIVShOzE3lYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxocFmZiZGhgbGTkbGRCgBAPUkLnE</recordid><startdate>20031104</startdate><enddate>20031104</enddate><creator>WILS NICOLE ANNE HELENA FREDDY</creator><creator>WIDDERSHOVEN FRANCISCUS PETRUS</creator><creator>SLOTBOOM MICHIEL</creator><scope>EVB</scope></search><sort><creationdate>20031104</creationdate><title>Semiconductor device and method of manufacturing the same</title><author>WILS NICOLE ANNE HELENA FREDDY ; WIDDERSHOVEN FRANCISCUS PETRUS ; SLOTBOOM MICHIEL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US6642103B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>WILS NICOLE ANNE HELENA FREDDY</creatorcontrib><creatorcontrib>WIDDERSHOVEN FRANCISCUS PETRUS</creatorcontrib><creatorcontrib>SLOTBOOM MICHIEL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WILS NICOLE ANNE HELENA FREDDY</au><au>WIDDERSHOVEN FRANCISCUS PETRUS</au><au>SLOTBOOM MICHIEL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device and method of manufacturing the same</title><date>2003-11-04</date><risdate>2003</risdate><abstract>A semiconductor device includes a semiconductor body (1) which is provided at a surface (2) with a non-volatile memory cell comprising a source (3) and a drain (4), and an access gate (14) which is electrically insulated from a gate structure (8) comprising a control gate (9), the gate structure (8) being electrically insulated from the semiconductor body (1) by a gate dielectric (11,25). The gate dielectric (11,25) is provided with a charge-storage region wherein data in the form of electric charge can be stored. The access gate (14) has a substantially flat surface portion (17) extending substantially parallel to the surface (2) of the semiconductor body (1) and has the shape of a block which is disposed against the gate structure (8) without overlapping the gate structure (8).</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
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language	eng
recordid	cdi_epo_espacenet_US6642103B2
source	esp@cenet
subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Semiconductor device and method of manufacturing the same
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-13T09%3A33%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=WILS%20NICOLE%20ANNE%20HELENA%20FREDDY&rft.date=2003-11-04&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS6642103B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true