Magnetic random access memory having a vertical write line

Magnetic random access memory having a vertical write line

A magnetic random access memory (MRAM) device is formed having a fixed magnetic layer, a free magnetic layer and a first dielectric layer between them in a recess. A metal plug and an optional second dielectric layer are also formed in the recess. The metal plug serves as a write path. A word line i...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: LAGE CRAIG S
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator LAGE CRAIG S
description A magnetic random access memory (MRAM) device is formed having a fixed magnetic layer, a free magnetic layer and a first dielectric layer between them in a recess. A metal plug and an optional second dielectric layer are also formed in the recess. The metal plug serves as a write path. A word line in the MRAM cell is the gate electrode of a transistor used to both write and read the MRAM device. To write the device a current travels in a substantially vertical direction and therefore only affects one MRAM cell, thereby not affecting adjacent cells. Data storage is thereby improved.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US6621730B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US6621730B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US6621730B13</originalsourceid><addsrcrecordid>eNrjZLDyTUzPSy3JTFYoSsxLyc9VSExOTi0uVshNzc0vqlTISCzLzEtXSFQoSy0CKkrMUSgvyixJVcjJzEvlYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyalAk-NDg83MjAzNjQ2cDI2JUAIAD-Muog</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Magnetic random access memory having a vertical write line</title><source>esp@cenet</source><creator>LAGE CRAIG S</creator><creatorcontrib>LAGE CRAIG S</creatorcontrib><description>A magnetic random access memory (MRAM) device is formed having a fixed magnetic layer, a free magnetic layer and a first dielectric layer between them in a recess. A metal plug and an optional second dielectric layer are also formed in the recess. The metal plug serves as a write path. A word line in the MRAM cell is the gate electrode of a transistor used to both write and read the MRAM device. To write the device a current travels in a substantially vertical direction and therefore only affects one MRAM cell, thereby not affecting adjacent cells. Data storage is thereby improved.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; SEMICONDUCTOR DEVICES ; STATIC STORES</subject><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20030916&amp;DB=EPODOC&amp;CC=US&amp;NR=6621730B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20030916&amp;DB=EPODOC&amp;CC=US&amp;NR=6621730B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LAGE CRAIG S</creatorcontrib><title>Magnetic random access memory having a vertical write line</title><description>A magnetic random access memory (MRAM) device is formed having a fixed magnetic layer, a free magnetic layer and a first dielectric layer between them in a recess. A metal plug and an optional second dielectric layer are also formed in the recess. The metal plug serves as a write path. A word line in the MRAM cell is the gate electrode of a transistor used to both write and read the MRAM device. To write the device a current travels in a substantially vertical direction and therefore only affects one MRAM cell, thereby not affecting adjacent cells. Data storage is thereby improved.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDyTUzPSy3JTFYoSsxLyc9VSExOTi0uVshNzc0vqlTISCzLzEtXSFQoSy0CKkrMUSgvyixJVcjJzEvlYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyalAk-NDg83MjAzNjQ2cDI2JUAIAD-Muog</recordid><startdate>20030916</startdate><enddate>20030916</enddate><creator>LAGE CRAIG S</creator><scope>EVB</scope></search><sort><creationdate>20030916</creationdate><title>Magnetic random access memory having a vertical write line</title><author>LAGE CRAIG S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US6621730B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>LAGE CRAIG S</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LAGE CRAIG S</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Magnetic random access memory having a vertical write line</title><date>2003-09-16</date><risdate>2003</risdate><abstract>A magnetic random access memory (MRAM) device is formed having a fixed magnetic layer, a free magnetic layer and a first dielectric layer between them in a recess. A metal plug and an optional second dielectric layer are also formed in the recess. The metal plug serves as a write path. A word line in the MRAM cell is the gate electrode of a transistor used to both write and read the MRAM device. To write the device a current travels in a substantially vertical direction and therefore only affects one MRAM cell, thereby not affecting adjacent cells. Data storage is thereby improved.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US6621730B1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
title Magnetic random access memory having a vertical write line
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T21%3A42%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LAGE%20CRAIG%20S&rft.date=2003-09-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS6621730B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true